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BAT165

Description
0.5 A, 40 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size66KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BAT165 Overview

0.5 A, 40 V, SILICON, SIGNAL DIODE

BAT165 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JESD-30 codeR-PDSO-G2
Humidity sensitivity level1
Maximum non-repetitive peak forward current2.5 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.6 W
Certification statusNot Qualified
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
BAT165...
Medium Power AF Schottky Diode
Forward current: 750 mA
Reverse voltage: 40 V
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAT165

ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BAT165
Parameter
Diode reverse voltage
2)
Forward current
2)
Package
SOD323
Configuration
single
Symbol
V
R
I
F
Value
40
750
500
2.5
600
150
-65 ... 150
Marking
C/White
Unit
V
mA
mA
A
mW
°C
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Average rectified forward current (50/60Hz, sinus)
I
FAV
Non-repetitive peak surge forward current
I
FSM
(t
10ms)
Total power dissipation
T
S
93°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
2
For
3
For
P
tot
T
j
T
stg
Symbol
R
thJS
Value
95
Unit
K/W
package may be available upon special request
T
A
> 25°C the derating of
V
R
and
I
F
has to be considered. Please refer to the atteched curves.
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19

BAT165 Related Products

BAT165 BAT165_07
Description 0.5 A, 40 V, SILICON, SIGNAL DIODE 0.5 A, 40 V, SILICON, SIGNAL DIODE
Diode component materials SILICON silicon
Diode type RECTIFIER DIODE Signal diode
Number of components 1 1
Number of terminals 2 2
Maximum repetitive peak reverse voltage 40 V 40 V
surface mount YES Yes
Terminal form GULL WING GULL WING
Terminal location DUAL pair
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