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BB831

Description
L BAND, 8.8 pF, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size50KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BB831 Overview

L BAND, 8.8 pF, SILICON, VARIABLE CAPACITANCE DIODE

BB831 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOD
package instructionR-PDSO-G2
Contacts2
Manufacturer packaging codeSOD-323
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresCAPACITANCE MATCHED TO 3 %
ConfigurationSINGLE
Diode Capacitance Tolerance11.36%
Minimum diode capacitance ratio7.8
Nominal diode capacitance8.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandL BAND
JESD-30 codeR-PDSO-G2
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BB831...
Silicon Variable Capacitance Diodes
Frequency range up to 2 GHz
Special design for use in TV-sat tuners
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BB831

Type
BB831
Package
SOD323
Configuration
single
L
S
(nH)
1.8
Marking
white T
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
(
R
5kΩ )
Forward current
Operating temperature range
Storage temperature
1
Pb-containing
Symbol
V
R
V
RM
I
F
T
op
T
stg
Value
30
35
20
-55 ... 125
-55 ... 150
Unit
V
mA
°C
package may be available upon special request
1
2007-04-20

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