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BBY53_07

Description
5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size128KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BBY53_07 Overview

5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

BBY53...
Silicon Tuning Diode
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
for VCO's in mobile communications equipment
High ratio at low reverse voltage
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53
BBY53-05W
!

, 
,

Type
BBY53
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-05W
Package
SOT23
TSLP-2-1
SC79
SCD80
SOD323
SOT323
Configuration
common cathode
single, leadless
single
single
single
common cathode
L
S
(nH)
2
0.4
0.6
0.6
1.8
1.4
Marking
S7s
LL
L
LL
white/5
S7s
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
1
Pb-containing
Symbol
V
R
I
F
T
op
T
stg
Value
6
20
-55 ... 125
-55 ... 150
Unit
V
mA
°C
package may be available upon special request
1
2007-09-18

BBY53_07 Related Products

BBY53_07 BBY53-02W BBY53 BBY53-02L
Description 5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE 5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Is it lead-free? - Lead free Lead free Lead free
Is it Rohs certified? - conform to conform to conform to
Maker - Infineon Infineon Infineon
package instruction - R-PDSO-F2 R-PDSO-G3 R-XBCC-N2
Contacts - 2 3 2
Reach Compliance Code - compli compli compli
ECCN code - EAR99 EAR99 EAR99
Minimum breakdown voltage - 6 V 6 V 6 V
Configuration - SINGLE COMMON CATHODE, 2 ELEMENTS SINGLE
Diode Capacitance Tolerance - 9.43% 9.43% 9.43%
Minimum diode capacitance ratio - 1.8 1.8 1.8
Nominal diode capacitance - 5.3 pF 5.3 pF 5.3 pF
Diode component materials - SILICON SILICON SILICON
Diode type - VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 code - R-PDSO-F2 R-PDSO-G3 R-XBCC-N2
Number of components - 1 2 1
Number of terminals - 2 3 2
Maximum operating temperature - 125 °C 125 °C 125 °C
Minimum operating temperature - -55 °C -55 °C -55 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY UNSPECIFIED
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status - Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage - 6 V 6 V 6 V
surface mount - YES YES YES
Terminal form - FLAT GULL WING NO LEAD
Terminal location - DUAL DUAL BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Varactor Diode Classification - HYPERABRUPT HYPERABRUPT HYPERABRUPT

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