BCP49
NPN Silicon Darlington Transistors
•
For general AF applications
•
High collector current
•
High current gain
•
Pb-free
4
2
1
3
(RoHS compliant) package
1)
•
Qualified according AEC Q101
C(2,4)
B(1)
E(3)
EHA00009
Type
BCP49
Maximum Ratings
Parameter
Marking
BCP 49
1=B
Pin Configuration
2=C
3=E
4=C
Package
SOT223
Symbol
V
CEO
V
CBO
V
EBO
Values
60
80
10
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 124 °C
Junction temperature
Storage temperature
Thermal Resistance
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
500
800
100
200
1.5
150
-65 ... 150
≤
17
mA
mA
W
°C
Junction - soldering point
2)
R
thJS
K/W
1Pb-containing package may be available upon special request
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
2007-04-27
BCP49
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 60 V,
I
E
= 0
Collector cutoff current
V
CB
= 60 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 5 V,
I
C
= 0
DC current gain 1)
I
C
= 100 µA,
V
CE
= 1 V
DC current gain 1)
I
C
= 10 mA,
V
CE
= 5 V
DC current gain 1)
I
C
= 100 mA,
V
CE
= 5 V
DC current gain 1)
I
C
= 500 mA,
V
CE
= 5 V
1) Pulse test: t
≤
300
µ
s, D = 2%
Unit
max.
-
-
-
100
10
100
-
-
-
-
nA
µA
nA
-
V
typ.
-
-
-
-
-
-
-
-
-
-
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
I
EBO
h
FE
h
FE
h
FE
h
FE
60
80
10
-
-
-
2000
4000
10000
2000
2
2007-04-27
BCP49
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter saturation voltage1)
I
C
= 100 mA,
I
B
= 0.1 mA
Base-emitter saturation voltage 1)
I
C
= 100 mA,
I
B
= 0.1 mA
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1) Pulse test: t
≤
300
µ
s, D = 2%
Symbol
min.
V
CEsat
V
BEsat
-
-
Values
typ.
-
-
max.
1
1.5
Unit
V
f
T
C
cb
-
-
200
6.5
-
-
MHz
pF
3
2007-04-27
BCP49
Total power dissipation
P
tot
=
f(T
S
)
Collector cutoff current
I
CBO
=
f
(T
A
)
V
CB
=
V
CEmax
1650
10
4
BCP 29/49
EHP00251
mW
Ι
CBO
1350
1200
nA
max
10
3
P
tot
1050
900
750
600
450
300
150
0
0
10
2
typ
10
1
10
0
15
30
45
60
75
90 105 120
°C
150
T
S
0
50
100
˚C
T
A
150
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5V
10
3
f
T
BCP 29/49
EHP00252
Permissible pulse load
P
totmax
/
P
totDC
=
f
(t
p
)
10
3
P
tot max
5
P
tot DC
BCP 29/49
EHP00253
MHz
t
p
D
=
T
t
p
T
10
2
5
10
2
5
10
1
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
10
1
10
2
mA
10
3
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
Ι
C
4
2007-04-27
BCP49
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 5V
10
6
h
FE
5
BCP 29/49
EHP00255
Collector-emitter saturation voltage
I
C
=
f
(V
CEsat
),
h
FE
= 1000
10
3
BCP 29/49
EHP00256
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
10
5
5
125 ˚C
25 ˚C
10
2
5
-55 ˚C
10
4
5
10
1
5
10
3
10
-1
10
0
10
1
10
2
mA 10
3
10
0
0
0.5
1.0
V
V
CEsat
1.5
Ι
C
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
160
pF
Base-emitter saturation voltage
I
C
=
f
(V
BEsat
),
h
FE
= 1000
10
3
BCP 29/49
EHP00258
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
CCB0(CEB0)
120
10
2
100
5
80
60
CEB
10
1
5
40
CCB
20
0
0
10
0
4
8
12
16
20
24
28
V
34
VCB0(VEB0
0
1.0
2.0
V
V
BEsat
3.0
5
2007-04-27
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