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BCP49_07

Description
NPN Silicon Darlington Transistors
File Size70KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Compare View All

BCP49_07 Overview

NPN Silicon Darlington Transistors

BCP49
NPN Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Pb-free
4
2
1
3
(RoHS compliant) package
1)
Qualified according AEC Q101
C(2,4)
B(1)
E(3)
EHA00009
Type
BCP49
Maximum Ratings
Parameter
Marking
BCP 49
1=B
Pin Configuration
2=C
3=E
4=C
Package
SOT223
Symbol
V
CEO
V
CBO
V
EBO
Values
60
80
10
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 124 °C
Junction temperature
Storage temperature
Thermal Resistance
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
500
800
100
200
1.5
150
-65 ... 150
17
mA
mA
W
°C
Junction - soldering point
2)
R
thJS
K/W
1Pb-containing package may be available upon special request
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
2007-04-27

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