D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
2N4125
2N4125
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents of 10
µA
to 100 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
30
30
4.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θ
JA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N4125
625
5.0
83.3
200
Units
mW
mW/
°
C
°
C/W
°C/W
©
2001 Fairchild Semiconductor Corporation
2N4125, Rev A
2N4125
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µ
A, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
30
30
4.0
50
50
V
V
V
nA
nA
ON CHARACTERISTICS*
h
FE
V
CE(
sat
)
V
BE(
sat
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE
= 1.0 V, I
C
= 2.0 mA
V
CE
= 1.0 V, I
C
= 50 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
50
25
150
0.4
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
V
CB
= 5.0 V, f = 100 kHz
V
BE
= 0.5 V, f = 100 kHz
I
C
= 2.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CE
= 5.0 V, I
C
= 100
µ
A,
R
S
= 1.0 kΩ,
f = 10Hz to 15.7 kHz,
50
2.0
5.0
dB
4.5
10
200
pF
pF
NF
Noise Figure
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
2N4125
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
250
V
CE
= 1 .0V
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
0.1
125°C
25 °C
β
= 10
200
150
25 °C
100
- 40 °C
0.05
0
- 40 °C
50
0.1
0.2
0.5 1
2
5
10 20
I
C
- COLLECTOR CURRE NT (mA)
50
100
1
10
100
I
C
- COLLECTOR CURRENT (mA)
200
V
BE( ON)
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
25 °C
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 °C
β
= 10
- 40 °C
0.6
0.4
0.2
0
125 °C
0.6
0.4
0.2
0
0.1
25 °C
125 °C
V
CE
= 1V
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
200
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
10
CB
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
10
C obo
= 25V
CAPACITANCE (pF)
8
6
4
2
0
0.1
C ibo
1
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
REVERSE BIAS VOLTAGE (V)
10
2N4125
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
6
V
CE
= 5.0V
NF - NOISE FIGURE (dB)
5
4
3
2
I C = 1.0 mA, R S = 200Ω
I C = 100
µA,
R S = 200Ω
Noise Figure vs Source Resistance
12
NF - NOISE FIGURE (dB)
10
8
6
4
I C = 100
µA
I C = 1.0 mA
V
CE
= 5.0V
f = 1.0 kHz
1
0
0.1
I C = 100
µA,
R S = 2.0 kΩ
2
0
0.1
1
10
f - FREQUENCY (kHz)
100
1
10
R
S
- SOURCE RESISTANCE (
kΩ
)
100
Switching Times
vs Collector Current
500
ts
Turn On and Turn Off Times
vs Collector Current
500
t off
I
c
10
t on
100
TIME (nS)
100
TIME (nS)
t on
I
B1
=
tf
10
I
B1
= I
B2
=
I
c
10
tr
10
V
BE(OFF)
= 0.5V
t off
I = I =
B1
B2
I
c
10
td
1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
1
1
I
10
- COLLECTOR CURRENT (mA)
100
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
SOT-223
0.75
TO-92
0.5
SOT-23
0.25
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
