2N6428/6428A
2N6428/6428A
Amplifier Transistor
• Collector-Emitter Voltage: V
CEO
= 50V
• Collector Dissipation: P
C
(max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
60
50
6
200
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
•
Refer to 2N5088 for graphs
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
V
CB
=30V, I
E
=0
V
CE
=30V, I
B
=0
V
BE
=5V, I
C
=0
V
CE
=5V, I
C
=10µA
V
CE
=5V, I
C
=100µA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
B
=10mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=1mA, V
CE
=5V
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=5V, I
C
=1mA, f=100MHz
V
CE
=5V, I
C
=100µA
(1) R
S
=10KΩ, B
W
=1Hz
f=100Hz
(2) R
S
=50KΩ, B
W
=15.7Hz
f=10Hz-10KHz
(3) R
S
=500Ω, B
W
=1Hz
f=10Hz
100
0.56
250
250
250
250
Min.
60
50
10
25
10
650
Typ.
Max.
Units
V
V
nA
nA
V
CE
(sat)
V
BE
(on)
C
ob
f
T
NF/NV
* Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure/Noise Voltage Level
: 2N6428
: 2N6428A
: 2N6428
: 2N6428A
: 2N6428
: 2N6428A
0.2
0.6
0.66
3
700
3/18.1
2/16.2
6/5.7
4/4.6
3.5/4.3
3/4.1
V
V
V
pF
MHz
dB/nV
dB/nV
dB/nV
dB/nV
dB/nV
dB/nV
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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©2000 Fairchild Semiconductor International
Rev. E
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