BSS214NW
OptiMOS
™
2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
20
140
250
1.5
A
V
mΩ
PG-SOT323
3
1
2
Type
BSS214NW
Package
Tape and Reel Information
Marking
X5s
Lead Free
Yes
Packing
Non dry
PG-SOT323 H6327: 3000 pcs/ reel
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=1.5 A,
R
GS
=25
Ω
I
D
=1.5 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
1.5
1.2
6
3.7
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±12
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Rev 2.2
page 1
2011-07-13
BSS214NW
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
1)
Values
typ.
max.
Unit
R
thJA
minimal footprint
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
= 0 V,
I
D
= 250 µA
V
GS(th)
I
DSS
V
DS
=0 V,
I
D
=3.7 µA
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=20 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=12 V,
V
DS
=0 V
V
GS
=2.5 V,
I
D
=0.7 A
V
GS
=4.5 V,
I
D
=1.5 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=1.2 A
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
20
0.7
-
-
0.95
-
-
1.2
1
V
μA
-
-
-
-
-
-
-
171
106
4
100
100
250
140
-
S
nA
mΩ
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
of the PCB.
1)
Rev 2.2
page 2
2011-07-13
BSS214NW
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=1.5 A,
T
j
=25 °C
V
R
=10 V,
I
F
=1.5 A,
di
F
/dt =100 A/µs
T
A
=25 °C
-
-
-
-
-
-
-
0.8
8.4
1.7
0.5
6
1.1
-
-
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=10 V,
I
D
=1.5 A,
V
GS
=0 to 5 V
-
-
-
-
0.24
0.2
0.8
2.2
-
-
-
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10 V,
V
GS
=4.5 V,
I
D
=1.5 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=10 V,
f
=1 MHz
-
-
-
-
-
-
-
107
46
6
4.1
7.8
6.8
1.4
143
62
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Rev 2.2
page 3
2011-07-13
BSS214NW
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥4.5
V
0.5
1.5
0.375
P
tot
[W]
1
0.25
I
D
[A]
0.5
0.125
0
0
40
80
120
0
0
20
40
60
80
100
120
140
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
1 µs
10 µs
1 ms 100 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
0.5
10
0
10 ms
10
2
0.2
0.1
Z
thJA
[K/W]
0.05
I
D
[A]
10
-1
DC
10
1
0.02
0.01
single pulse
10
-2
10
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev 2.2
page 4
2011-07-13
BSS214NW
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
8
3.5 V
3V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
240
2.2 V
2.5 V
6
4.5 V
200
3V
R
DS(on)
[m
Ω
]
160
3.5 V
I
D
[A]
4
120
4.5 V
6V
2.5 V
80
2
2.3 V
40
2V
1.8 V
0
0
1
2
3
0
0
1
2
3
4
5
6
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
1.5
10
8
1
6
g
fs
[S]
4
0.5
150 °C
25 °C
I
D
[A]
2
0
0
1
2
3
0
0
2
4
6
8
V
GS
[V]
I
D
[A]
Rev 2.2
page 5
2011-07-13
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