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BSS214NW L6327

Description
mosfet N-CH 20v 1.5A sot-323
Categorysemiconductor    Discrete semiconductor   
File Size185KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSS214NW L6327 Overview

mosfet N-CH 20v 1.5A sot-323

BSS214NW
OptiMOS
2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
20
140
250
1.5
A
V
PG-SOT323
3
1
2
Type
BSS214NW
Package
Tape and Reel Information
Marking
X5s
Lead Free
Yes
Packing
Non dry
PG-SOT323 H6327: 3000 pcs/ reel
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=1.5 A,
R
GS
=25
Ω
I
D
=1.5 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
1.5
1.2
6
3.7
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±12
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Rev 2.2
page 1
2011-07-13

BSS214NW L6327 Related Products

BSS214NW L6327 BSS214NW BSS214NWH6327
Description mosfet N-CH 20v 1.5A sot-323 The best? Small-Signal-Transistor Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 1.5A Gate-source threshold voltage: 1.2V @ 3.7uA Drain-source on-resistance: 140mΩ @ 1.5A, 4.5V Maximum power Dissipation (Ta=25°C): 500mW Type: N-channel
Is it Rohs certified? - conform to conform to
Maker - Infineon Infineon
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code - compliant compliant
Other features - AVALANCHE RATED LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 20 V 20 V
Maximum drain current (ID) - 1.5 A 1.5 A
Maximum drain-source on-resistance - 0.14 Ω 0.14 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code - R-PDSO-G3 R-PDSO-G3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 0.5 W 0.5 W
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Transistor component materials - SILICON SILICON
Base Number Matches - 1 1
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