Small Signal Field-Effect Transistor, 1-Element, Silicon,
| Parameter Name | Attribute value |
| Maker | TEMIC |
| Reach Compliance Code | unknown |
| Configuration | SINGLE |
| Maximum drain-source on-resistance | 20 Ω |
| JESD-30 code | O-PBCY-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| BSS92 | TP1220L | TP2020L | VP2020L | |
|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 1-Element, Silicon, | Small Signal Field-Effect Transistor, 0.12A I(D), 120V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, | Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, | Small Signal Field-Effect Transistor, 0.48A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA (TO-92), 3 PIN |
| Maker | TEMIC | TEMIC | TEMIC | TEMIC |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Configuration | SINGLE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE |
| Maximum drain-source on-resistance | 20 Ω | 20 Ω | 20 Ω | 20 Ω |
| JESD-30 code | O-PBCY-T3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-T3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | WIRE | WIRE | THROUGH-HOLE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| package instruction | - | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-T3 |
| Minimum drain-source breakdown voltage | - | 120 V | 200 V | 200 V |
| Maximum drain current (ID) | - | 0.12 A | 0.12 A | 0.48 A |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Polarity/channel type | - | P-CHANNEL | P-CHANNEL | P-CHANNEL |
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