VP2020L datasheet, PDF - EEWORLD Datasheet

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VP2020L: DescriptionSmall Signal Field-Effect Transistor, 0.48A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA (TO-92), 3 PIN; CategoryDiscrete semiconductor The transistor; File Size241KB，4 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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VP2020L Overview

Small Signal Field-Effect Transistor, 0.48A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA (TO-92), 3 PIN

VP2020L Parametric

Parameter Name	Attribute value
Maker	TEMIC
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.48 A
Maximum drain-source on-resistance	20 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON

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VP2020L Related Products

	VP2020L	BSS92	TP1220L	TP2020L
Description	Small Signal Field-Effect Transistor, 0.48A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA (TO-92), 3 PIN	Small Signal Field-Effect Transistor, 1-Element, Silicon,	Small Signal Field-Effect Transistor, 0.12A I(D), 120V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,	Small Signal Field-Effect Transistor, 0.12A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA,
Maker	TEMIC	TEMIC	TEMIC	TEMIC
Reach Compliance Code	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Maximum drain-source on-resistance	20 Ω	20 Ω	20 Ω	20 Ω
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON
package instruction	CYLINDRICAL, O-PBCY-T3	-	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Minimum drain-source breakdown voltage	200 V	-	120 V	200 V
Maximum drain current (ID)	0.48 A	-	0.12 A	0.12 A
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Polarity/channel type	P-CHANNEL	-	P-CHANNEL	P-CHANNEL

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