BSC016N04LS G
OptiMOS™3
Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel
• Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant;
•Halogen-free according to IEC61249-2-21
Type
BSC016N04LS G
Package
PG-TDSON-8
Marking
016N04LS
Product Summary
V
DS
R
DS(on),max
I
D
40
1.6
100
PG-TDSON-8
V
mΩ
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
100
100
100
100
Unit
A
31
400
50
295
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=50 A,
R
GS
=25
Ω
J-STD20 and JESD22
Rev. 1.6
page 1
2009-10-22
BSC016N04LS G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
139
2.5
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Device on PCB
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
0.9
20
50
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=85 µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=50 A
V
GS
=10 V,
I
D
=50 A
Gate resistance
Transconductance
2)
40
1.2
-
-
-
0.1
-
2
1
V
µA
-
-
-
-
-
10
10
1.8
1.3
1.5
190
100
100
2.3
1.6
-
-
Ω
S
nA
mΩ
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
95
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
See figure 3 for more detailed information
See figure 13 for more detailed information
3)
4)
Rev. 1.6
page 2
2009-10-22
BSC016N04LS G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=20 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
V
DS
=0.1 V,
V
GS
=0 to 10 V
V
DD
=20 V,
V
GS
=0 V
V
DD
=20 V,
I
D
=30 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
25
14
11
23
113
2.9
54
-
-
-
-
150
-
-
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20 V,
V
GS
=10 V,
I
D
=30 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=20 V,
f
=1 MHz
-
-
-
-
-
-
-
8900
1800
100
14
7.6
56
9.4
12000 pF
2400
-
-
-
-
-
ns
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
106
69
-
-
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=20 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.8
100
400
1.2
A
V
Reverse recovery charge
5)
Q
rr
-
125
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.6
page 3
2009-10-22
BSC016N04LS G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
160
120
140
100
120
80
100
P
tot
[W]
80
I
D
[A]
0
40
80
120
160
60
60
40
40
20
20
0
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1 µs
10 µs
10
2
DC
100 µs
1
1 ms
Z
thJC
[K/W]
I
D
[A]
0.5
10
1
10 ms
0.2
0.1
10
0
0.1
0.05
0.02
0.01
10
-1
10
-1
10
0
10
1
10
2
0.01
single pulse
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.6
page 4
2009-10-22
BSC016N04LS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
600
4.5 V
5V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
3.5
500
10 V
3
3.5 V
2.5
400
R
DS(on)
[m
Ω
]
4V
4V
2
4.5 V
5V
I
D
[A]
300
1.5
10 V
200
3.5 V
1
100
3.2 V
3V
2.8 V
0.5
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
300
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
300
250
250
200
200
150
g
fs
[S]
150 °C
25 °C
I
D
[A]
150
100
100
50
50
0
0
1
2
3
4
5
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 1.6
page 5
2009-10-22
京公网安备 11010802033920号
EEWORLD
