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2N5433E

Description
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC
CategoryDiscrete semiconductor    The transistor   
File Size150KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

2N5433E Overview

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC

2N5433E Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknow
Shell connectionGATE
ConfigurationSINGLE
Maximum drain-source on-resistance7 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)15 pF
JEDEC-95 codeTO-206AC
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2N5433E Related Products

2N5433E 2N5432E 2N5434E
Description Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknow unknow unknow
Shell connection GATE GATE GATE
Configuration SINGLE SINGLE SINGLE
Maximum drain-source on-resistance 7 Ω 5 Ω 10 Ω
FET technology JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 15 pF 15 pF 15 pF
JEDEC-95 code TO-206AC TO-206AC TO-206AC
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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