2N7000KL/BS170KL
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
60
r
DS(on)
(W)
2 @ V
GS
= 10 V
4 @ V
GS
= 4.5 V
V
GS(th)
(V)
1.0 2.5
1 0 to 2 5
I
D
(A)
0.47
0.33
D
TrenchFETr Power MOSFET
D
ESD Protected: 2000 V
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Soild State Relays
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
TO-226AA
(TO-92)
S
1
Device Marking
Front View
“S” 2N
7000KL
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
TO-92-18RM
(TO-18 Lead Form)
D
1
Device Marking
Front View
“S” BS
170KL
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
G
D
100
W
G
2
G
2
D
3
Top View
S
3
Top View
S
Ordering Information: 2N7000KL-TR1
Ordering Information: BS170KL-TR1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
60
"20
0.47
0.37
1.0
0.8
0.51
156
−55
to 150
Unit
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
www.vishay.com
1
2N7000KL/BS170KL
Vishay Siliconix
New Product
SPECIFICATIONS
a
(T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"10
V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55_C
V
GS
= 10 V, V
DS
= 7.5 V
V
GS
= 4.5 V, V
DS
= 10 V
V
GS
= 10 V, I
D
= 0.5 A
V
GS
= 4.5 V, I
D
= 0.2 A
V
DS
= 10 V, I
D
= 0.5 A
I
S
= 0.3 A, V
GS
= 0 V
0.8
0.5
1.1
1.6
550
0.87
1.3
2
4
60
1
2.0
2.5
"1
1
10
V
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
On-State
On State Drain Current
b
I
D( )
D(on)
A
Drain-Source On-Resistance
Drain Source On Resistance
b
Forward Transconductance
b
Diode Forward Voltage
r
DS( )
DS(on)
g
fs
V
SD
W
mS
V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On
Turn On Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 150
W
I
D
^
0.2 A V
GEN
= 10V
0 2 A,
R
g
= 10
W
V
DS
= 10 V, V
GS
= 4.5 V
I
D
^
0.25 A
0.4
0.11
0.15
173
3.8
4.8
12.8
9.6
10
15
20
15
ns
W
0.6
nC
Turn-Off Time
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.0
Output Characteristics
V
GS
= 10, 7 V
6V
5V
I D
−
Drain Current (A)
1.2
Transfer Characteristics
T
J
=
−55_C
0.8
I D
−
Drain Current (A)
0.9
25_C
0.6
125_C
0.6
0.4
4V
0.2
3V
0.0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
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0.3
0
0
1
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
2
2N7000KL/BS170KL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4.0
3.5
r DS(on)
−
On-Resistance (
W
)
32
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
25
V
GS
= 4.5 V
V
GS
= 10 V
C
−
Capacitance (pF)
24
C
iss
Vishay Siliconix
On-Resistance vs. Drain Current
40
Capacitance
V
GS
= 0 V
16
C
oss
8
C
rss
I
D
−
Drain Current (mA)
V
DS
−
Drain-to-Source Voltage (V)
7
V
GS
−
Gate-to-Source Voltage (V)
6
5
4
3
2
1
0
0.0
V
DS
= 10 V
I
D
= 250 mA
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V @ 500 mA
r
DS(on)
−
On-Resiistance
(Normalized)
1.6
1.2
V
GS
= 4.5 V
@ 200 mA
0.8
0.4
0.1
0.2
0.3
0.4
0.5
0.6
0.0
−50
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
1000
V
GS
= 0 V
r DS(on)
−
On-Resistance (
W
)
5
On-Resistance vs. Gate-Source Voltage
4
I
S
−
Source Current (A)
100
T
J
= 125_C
3
2
I
D
= 200 mA
I
D
= 500 mA
10
T
J
= 25_C
T
J
=
−55_C
1
1
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
0
0
2
4
6
8
10
V
GS
−
Gate-to-Source Voltage (V)
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2N7000KL/BS170KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Variance Over Temperature
0.4
0.2
V GS(th) Variance (V)
I
D
= 250
mA
−0.0
−0.2
−0.4
−0.6
−0.8
−50
4
Power (W)
12
20
Single Pulse Power, Junction-to-Ambient
16
8
T
A
= 25_C
0
−25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
−
Junction Temperature (_C)
10
Safe Operating Area
I
DM
Limited
Limited by r
DS(on)
1
I
D
−
Drain Current (A)
1 ms
10 ms
0.1
I
D(on)
Limited
100 ms
1s
10 s
dc
BV
DSS
Limited
0.001
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
0.01
T
A
= 25_C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=350_C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
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Document Number: 72705
S-40247—Rev. A, 16-Feb-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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