SPD04P10P G
SIPMOS
®
Power-Transistor
Features
• P-Channel
• Enhancement mode
• Normal level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
-100
1
-4
V
Ω
A
PG-TO252-3
Type
SPD04P10P G
Package
PG-TO252-3
Marking
04P10P
Lead free
Yes
Packing
Non dry
Tape and reel information
1000 pcs / reel
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-A114-HBM
T
C
=25 °C
V
GS
=-10 V,
I
D
=-2.8 A
I
D
=-4 A,
R
GS
=25
Ω
Value
-4
-2.8
-16
57
±20
38
-55 ... 175
1A (250 V to 500 V)
260 °C
55/175/56
mJ
V
W
°C
Unit
A
Rev 1.5
page 1
2009-02-16
SPD04P10P G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
R
thJC
minimal footprint,
steady state
6 cm
2
cooling area
1)
,
steady state
Values
typ.
max.
Unit
-
-
3.9
K/W
R
thJA
-
-
75
-
-
50
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-250 µA
V
GS(th)
V
DS
=V
GS
,
I
D
=-380 µA
V
DS
=-100 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-100 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-20 V,
V
DS
=0 V
V
GS
=-10 V,
I
D
=-2.8 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-2.8 A
-100
-2.1
-
-3.0
-
-4
V
Zero gate voltage drain current
I
DSS
-
-0.1
-1
µA
-
-
-
-10
-10
644
-100
-100
1000
nA
mΩ
Transconductance
g
fs
1.2
2.4
-
S
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Rev 1.5
page 2
2009-02-16
SPD04P10P G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=-80 V,
I
D
=-4 A,
V
GS
=0 to -10 V
-
-
-
-
1.4
5
9
6
1.8
7
12
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-50 V,
V
GS
=-
10 V,
I
D
=-4 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=-25 V,
f
=1 MHz
-
-
-
-
-
-
-
240
62
28
5.7
8.6
14
4.5
319
82
42
8.6
13
21
6.8
ns
pF
Values
typ.
max.
Unit
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
R
=50 V,
I
F
=|I
S
|,
di
F
/dt =100 A/µs
T
C
=25 °C
V
GS
=0 V,
I
F
=-4 A,
T
j
=25 °C
-
-
-
-
-
-
-
-0.8
74
218
-4.0
16.0
-1.2
93
273
V
ns
nC
A
2)
See figure 16 for gate charge parameter definition
Rev 1.5
page 3
2009-02-16
SPD04P10P G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
); |V
GS
|≥10 V
40
35
4
30
3
25
P
tot
[W]
20
-I
D
[A]
0
40
80
120
160
2
15
10
1
5
0
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
2
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10
1
10 µs
0.5
Z
thJS
[K/W]
100 µs
-I
D
[A]
10
0
0.2
1 ms
0.1
0.05
10
0
limited by on-state
resistance
10 ms
DC
0.02
0.01
single pulse
10
-1
10
10
0
-1
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
-V
DS
[V]
t
p
[s]
Rev 1.5
page 4
2009-02-16
SPD04P10P G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
8
-20 V
-10 V
-4.5 V
-8 V
-7 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
1600
7
1400
-5 V
6
1200
-6 V
R
DS(on)
[m
Ω
]
5
-I
D
[A]
-6 V
4
1000
-7 V
3
-5 V
800
-8 V
-10 V
-20 V
2
-4.5 V
-4 V
600
1
0
0
2
4
6
8
10
400
0
2
4
6
8
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
8
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
7
4
6
3
5
-I
D
[A]
4
25 °C
g
fs
[S]
7
2
3
2
125 °C
1
1
0
1
3
5
0
0
2
4
6
8
-V
GS
[V]
-I
D
[A]
Rev 1.5
page 5
2009-02-16
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