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SPD04P10P

Description
SIPMOS庐 Power-Transistor Features P-Channel Enhancement mode
File Size468KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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SPD04P10P Overview

SIPMOS庐 Power-Transistor Features P-Channel Enhancement mode

SPD04P10P G
SIPMOS
®
Power-Transistor
Features
• P-Channel
• Enhancement mode
• Normal level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
-100
1
-4
V
A
PG-TO252-3
Type
SPD04P10P G
Package
PG-TO252-3
Marking
04P10P
Lead free
Yes
Packing
Non dry
Tape and reel information
1000 pcs / reel
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-A114-HBM
T
C
=25 °C
V
GS
=-10 V,
I
D
=-2.8 A
I
D
=-4 A,
R
GS
=25
Value
-4
-2.8
-16
57
±20
38
-55 ... 175
1A (250 V to 500 V)
260 °C
55/175/56
mJ
V
W
°C
Unit
A
Rev 1.5
page 1
2009-02-16

SPD04P10P Related Products

SPD04P10P SPD04P10PG
Description SIPMOS庐 Power-Transistor Features P-Channel Enhancement mode SIPMOS庐 Power-Transistor Features P-Channel Enhancement mode

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