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SPP21N50C3_09

Description
21 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size750KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

SPP21N50C3_09 Overview

21 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

SPP21N50C3_09 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage500 V
Processing package descriptionGreen, Plastic, TO-220FP, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current21 A
Rated avalanche energy690 mJ
Maximum drain on-resistance0.1900 ohm
Maximum leakage current pulse63 A
SPP21N50C3
SPI21N50C3, SPA21N50C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
1
2
3
V
DS
@
T
jmax
R
DS(on)
I
D
PG-TO220FP
P
G-TO262
560
0.19
21
PG-TO220
V
A
Type
SPP21N50C3
SPI21N50C3
SPA21N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4565
Q67040-S4564
SP000216364
Marking
21N50C3
21N50C3
21N50C3
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Symbol
SPP_I
I
D
21
13.1
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
dv/dt
page
1
Value
SPA
Unit
A
21
1)
13.1
1)
63
690
1
21
±20
±30
34.5
15
W
°C
V/ns
2009-12-22
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=10A,
V
DD
=50V
63
690
1
21
±20
±30
208
A
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=21A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
Reverse diode dv/dt
7)
Rev.
3.2
A
V
-55...+150
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