BSC026N02KS G
OptiMOS™2
Power-Transistor
Features
• For fast switching converters and sync. rectification
• Qualified according to JEDEC
1)
for target applications
• Super Logic level 2.5V rated; N-channel
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
20
2.6
100
PG-TDSON-8
V
mΩ
A
Type
BSC026N02KS G
Package
PG-TDSON-8
Marking
026N02KS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=2.5 V,
T
C
=25 °C
V
GS
=2.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=45 K/W
2)
Value
100
85
100
65
25
200
550
6
±12
Unit
A
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
I
D,pulse
E
AS
dv /dt
V
GS
T
C
=25 °C
3)
I
D
=50 A,
R
GS
=25
Ω
I
D
=50 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
mJ
kV/µs
V
J-STD20 and JESD22
Rev.1.06
page 1
2010-07-01
BSC026N02KS G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
78
2.8
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
SMD version, device on PCB
R
thJA
minimal footprint
6 cm
2
cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=200 µA
V
DS
=20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=20 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=12 V,
V
DS
=0 V
V
GS
=2.5 V,
I
D
=50 A
V
GS
=4.5 V,
I
D
=50 A
Gate resistance
Transconductance
2)
-
-
1.6
18
K/W
-
-
-
-
62
45
20
0.7
-
-
0.95
-
-
1.2
1
V
µA
-
-
-
-
-
-
-
3.4
2.1
1.5
190
100
100
4.5
2.6
-
-
Ω
S
nA
mΩ
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
95
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
See figure 3
3)
Rev.1.06
page 2
2010-07-01
BSC026N02KS G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=10 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
0.85
92
200
1.2
V
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=10 V,
V
GS
=0 V
V
DD
=10 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
-
11.4
6
7
13
40
1.9
36
23
15.2
7.4
10.8
18.6
52.7
-
48.2
-
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10 V,
V
GS
=4.5 V,
I
D
=50 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=10 V,
f
=1 MHz
-
-
-
-
-
-
-
5900
1700
250
21
115
52
9
7800
2300
380
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery charge
Q
rr
-
28
-
nC
4)
See figure 16 for gate charge parameter definition
Rev.1.06
page 3
2010-07-01
BSC026N02KS G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥4.5
V
80
120
70
100
60
80
50
P
tot
[W]
40
I
D
[A]
0
40
80
120
160
60
30
40
20
20
10
0
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
10 µs
100 µs
1 ms
10
2
10
0
0.5
0.2
Z
thJC
[K/W]
DC
0.1
I
D
[A]
10
1
10 ms
10
-1
0.05
0.02
0.01
10
0
10
-2
single pulse
10
-1
10
-1
10
-3
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev.1.06
page 4
2010-07-01
BSC026N02KS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
200
4V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
10
9
175
3V
8
150
2.5 V
7
R
DS(on)
[mW]
125
2.4 V
6
5
2V
I
D
[A]
100
2.2 V
75
4
2.5 V
2.2 V
3
50
2V
3V
4.5 V
3.5 V
2
1.8 V
1.6 V
25
1
0
3
0
10
20
30
40
4V
0
0
1
2
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
100
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
300
250
75
200
50
g
fs
[S]
25 °C
150 °C
I
D
[A]
150
100
25
50
0
0
1
2
3
0
0
25
50
75
100
V
GS
[V]
I
D
[A]
Rev.1.06
page 5
2010-07-01
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