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BSC077N12NS3G

Description
OptiMOS3 Power-Transistor
CategoryDiscrete semiconductor    The transistor   
File Size435KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BSC077N12NS3G Overview

OptiMOS3 Power-Transistor

BSC077N12NS3G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionGREEN, PLASTIC, TDSON-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)330 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage120 V
Maximum drain current (Abs) (ID)98 A
Maximum drain current (ID)13.4 A
Maximum drain-source on-resistance0.0077 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)139 W
Maximum pulsed drain current (IDM)392 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSC077N12NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
Product Summary
V
DS
R
DS(on),max
I
D
120
7.7
98
PG-TDSON-8
V
mΩ
A
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
BSC077N12NS3 G
Package
PG-TDSON-8
Marking
077N12NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Pulsed drain current
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Value
98
61
13.4
392
330
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=50 A,
R
GS
=25
mJ
V
W
°C
T
C
=25 °C
139
-55 ... 150
55/150/56
J-STD20 and JESD22
Rev. 2.5
page 1
2009-10-21
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