PD - 97391B
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
Low V
CE (ON)
trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for I
LM
Positive V
CE (ON)
temperature co-efficient
Ultra fast soft recovery co-pak diode
Tight parameter distribution
Lead-Free
IRG7PH42UDPbF
IRG7PH42UD-EP
C
V
CES
= 1200V
I
C
= 45A, T
C
= 100°C
G
E
T
J(max)
= 150°C
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low V
CE (ON)
and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
n-channel
C
V
CE(on)
typ. = 1.7V
C
Applications
•
•
•
•
U.P.S.
Welding
Solar Inverter
Induction Heating
GC
E
TO-247AC
IRG7PH42UDPbF
E
GC
TO-247AD
IRG7PH42UD-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
1200
85
45
30
90
120
85
45
120
±30
320
130
-55 to +150
Units
V
g
c
A
d
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
f
Thermal Resistance Junction-to-Case-(each Diode)
f
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.39
0.56
–––
–––
Units
°C/W
1
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10/26/09
IRG7PH42UDPbF/IRG7PH42UD-EP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min.
1200
—
—
—
3.0
—
—
—
—
—
—
—
Typ.
—
0.18
1.7
2.1
—
-14
32
4.4
1200
2.0
2.2
—
Max. Units
—
—
2.0
—
6.0
—
—
150
—
2.4
—
±100
nA
V
V
Conditions
V
GE
= 0V, I
C
= 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
V/°C V
GE
= 0V, I
C
= 2.0mA (25°C-150°C)
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
V
V
S
µA
I
C
= 30A, V
GE
= 15V, T
J
= 150°C
V
CE
= V
GE
, I
C
= 1.0mA
V
CE
= 50V, I
C
= 30A, PW = 80µs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
F
= 30A
I
F
= 30A, T
J
= 150°C
V
GE
= ±30V
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 150°C)
gfe
I
CES
V
FM
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
157
21
69
2105
1182
3287
25
32
229
63
2978
1968
4946
19
32
290
154
3338
124
75
Max. Units
236
32
104
2374
1424
3798
34
41
271
86
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
ns
µJ
ns
µJ
nC
I
C
= 30A
V
GE
= 15V
V
CC
= 600V
Conditions
I
C
= 30A, V
CC
= 600V, V
GE
= 15V
R
G
= 10Ω, L = 200µH,T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 30A, V
CC
= 600V, V
GE
=15V
R
G
=10Ω, L=200µH, T
J
= 150°C
eÃ
Energy losses include tail & diode reverse recovery
f = 1.0Mhz
T
J
= 150°C, I
C
= 120A
V
CC
= 960V, Vp =1200V
Rg = 10Ω, V
GE
= +20V to 0V
FULL SQUARE
—
—
—
1475
153
34
—
—
—
µJ
ns
A
T
J
= 150°C
V
CC
= 600V, I
F
= 30A
Rg = 10Ω, L =1.0mH
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 22µH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at
T
J
of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 78A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
2
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IRG7PH42UDPbF/IRG7PH42UD-EP
60
50
Load Current ( A )
40
30
Square wave:
60% of rated
voltage
I
For both:
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 95W
20
10
0
0.1
Ideal diodes
1
f , Frequency ( kHz )
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
350
300
250
80
60
Ptot (W)
IC (A)
200
150
100
50
40
20
0
25
50
75
100
T C (°C)
125
150
175
0
0
20
40
60
80
100 120 140 160
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
100
IC (A)
10
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
VCE (V)
1000
10000
100µsec
1msec
IC (A)
10
1
10
100
VCE (V)
1000
10000
10µsec
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
150°C; V
GE
=15V
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
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3
IRG7PH42UDPbF/IRG7PH42UD-EP
120
100
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
100
80
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
60
40
20
0
0
2
4
6
8
10
VCE (V)
60
40
20
0
0
2
4
6
8
10
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
120
100
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
120
100
80
-40°C
25°C
150°C
ICE (A)
IF (A)
60
40
20
0
0
2
4
6
8
10
VCE (V)
60
40
20
0
0.0
1.0
2.0
3.0
VF (V)
4.0
5.0
6.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80µs
12
10
8
VCE (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
12
10
8
VCE (V)
6
4
2
0
4
8
ICE = 15A
ICE = 30A
ICE = 60A
6
4
2
0
ICE = 15A
ICE = 30A
ICE = 60A
12
VGE (V)
16
20
4
8
12
VGE (V)
16
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
4
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IRG7PH42UDPbF/IRG7PH42UD-EP
12
ICE, Collector-to-Emitter Current (A)
120
100
80
60
40
20
0
4
8
12
VGE (V)
16
20
4
6
8
10
12
VGE, Gate-to-Emitter Voltage (V)
T J = 25°C
T J = 150°C
10
8
6
4
2
0
ICE = 15A
ICE = 30A
ICE = 60A
VCE (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
7000
6000
5000
Energy (µJ)
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V
1000
tF
Swiching Time (ns)
4000
EON
3000
2000
EOFF
1000
0
0
10
20
30
IC (A)
40
50
60
tdOFF
100
tR
tdON
10
0
10
20
30
IC (A)
40
50
60
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 200µH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
6000
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 150°C; L = 200µH; V
CE
= 600V, R
G
= 10Ω; V
GE
= 15V
10000
5000
Swiching Time (ns)
Energy (µJ)
4000
EON
EOFF
1000
td OFF
3000
tF
100
tR
tdON
2000
1000
0
20
40
60
80
100
RG (Ω)
10
0
20
40
60
80
100
RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 200µH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 200µH; V
CE
= 600V, I
CE
= 30A; V
GE
= 15V
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