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SPA20N60CFD_09

Description
20.7 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size374KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

SPA20N60CFD_09 Overview

20.7 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

SPA20N60CFD_09 Parametric

Parameter NameAttribute value
Minimum breakdown voltage600 V
Number of terminals3
Processing package descriptionGREEN, PLASTIC, TO-220FP, 3 PIN
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
Rated avalanche energy690 mJ
Shell connectionISOLATED
structureSINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_20.7 A
Maximum leakage current20.7 A
Maximum drain on-resistance0.2200 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jedec_95_codeTO-220AB
jesd_30_codeR-PSFM-T3
jesd_609_codee3
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
operating modeENHANCEMENT MODE
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typeN-CHANNEL
wer_dissipation_max__abs_35 W
Maximum leakage current pulse52 A
qualification_statusCOMMERCIAL
sub_categoryFET General Purpose Power
surface mountNO
terminal coatingMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
dditional_featureAVALANCHE RATED
SPA20N60CFD
CoolMOS
TM
Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC
0)
for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D1)
600
0.22
20.7
V
A
PG-TO220FP
Type
SPA20N60CFD
Package
PG-TO220FP
Ordering Code
SP000216361
Marking
20N60CFD
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR2),3)
Avalanche current, repetitive
t
AR2),3)
Drain source voltage slope
Reverse diode dv /dt
Maximum diode commutation speed
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
dv /dt
di /dt
V
GS
I
D
=20.7 A,
V
DS
=480 V,
T
j
=125 °C
I
S
=20.7 A,
V
DS
=480 V,
T
j
=125 °C
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Rev. 1.3
P
tot
T
j
,
T
stg
page 1
T
C
=25 °C
T
C
=25 °C
I
D
=10 A,
V
DD
=50 V
I
D
=20 A,
V
DD
=50 V
Value
20.7
13.1
52
690
1
20
80
40
900
±20
±30
35
-55 ... +150
W
°C
2009-12-22
A
V/ns
V/ns
A/µs
V
mJ
Unit
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