TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71, FET General Purpose Small Signal
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| package instruction | CYLINDRICAL, O-MBCY-W6 |
| Reach Compliance Code | unknow |
| Other features | LOW NOISE |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| FET technology | JUNCTION |
| Maximum feedback capacitance (Crss) | 2 pF |
| JEDEC-95 code | TO-71 |
| JESD-30 code | O-MBCY-W6 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 2 |
| Number of terminals | 6 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.25 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2N5546-E3 | 2N5545-E3 | 2N5547-E3 | |
|---|---|---|---|
| Description | TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71, FET General Purpose Small Signal | TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71, FET General Purpose Small Signal | TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71, FET General Purpose Small Signal |
| Is it lead-free? | Lead free | Lead free | Lead free |
| Is it Rohs certified? | conform to | conform to | conform to |
| package instruction | CYLINDRICAL, O-MBCY-W6 | CYLINDRICAL, O-MBCY-W6 | CYLINDRICAL, O-MBCY-W6 |
| Reach Compliance Code | unknow | unknow | unknow |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| FET technology | JUNCTION | JUNCTION | JUNCTION |
| Maximum feedback capacitance (Crss) | 2 pF | 2 pF | 2 pF |
| JEDEC-95 code | TO-71 | TO-71 | TO-71 |
| JESD-30 code | O-MBCY-W6 | O-MBCY-W6 | O-MBCY-W6 |
| JESD-609 code | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 |
| Number of components | 2 | 2 | 2 |
| Number of terminals | 6 | 6 | 6 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.25 W | 0.25 W | 0.25 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |
京公网安备 11010802033920号
EEWORLD
