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2N4118A(TO-71)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size286KB,1 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

2N4118A(TO-71) Overview

Transistor

2N4118A(TO-71) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Base Number Matches1
2N4118A
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4118A
The 2N4118A is an Ultra-High Input Impedance N-Channel JFET
The 2N4118A provides ultra-high input impedance. The
device is specified with a 1-pA limit and typically
operates at 0.2 pA. The part is ideal for use as a high-
impedance sensitive front-end amplifier.
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX 2N4118A 
LOW POWER 
MINIMUM CIRCUIT LOADING 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain or Gate to Source (Note 2) 
 
I
DSS
<90 µA
 
I
GSS
<1 pA 
2N4118A Benefits:
Insignificant Signal Loss / Error Voltage
with High-Impedance Source
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
‐65°C to +175°C 
‐55°C to +150°C 
300mW 
50mA 
‐40V 
 
2N4118A Applications:
High-Impedance Transducer
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment
 
2N4118A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BV
GSS
 
Gate to Source Breakdown Voltage 
‐40 
‐‐ 
‐‐ 
I
= ‐1µA,   V
DS
 = 0V 
V
GS(off)
 
Gate to Source Cutoff Voltage 
‐1 
‐‐ 
‐3 
                  V
DS
 = 10V,   I
= 1nA 
I
DSS
 
Gate to Source Saturation Current 
0.08 
‐‐ 
0.24 
mA 
V
DS
 = 10V,   V
GS 
= 0V 
I
GSS
 
Gate Leakage Current 
‐‐ 
‐‐ 
‐1 
pA 
V
GS 
= ‐20V,  V
DS
 = 0V 
‐‐ 
‐‐ 
‐2.5 
V
GS 
= ‐20V,  V
DS
 = 0V,  150°C 
g
fs
 
Forward Transconductance(Note 3) 
80 
‐‐ 
250 
µmho 
V
DS
 = 10V,   V
GS 
= 0V,   f = 1kHz 
 
g
os
 
Output Conductance 
‐‐ 
‐‐ 
C
iss
 
Input Capacitance 
‐‐ 
‐‐ 
 
 
pF 
V
DS
 = 10V,   V
GS 
= 0V,   f = 1MHz 
C
rss
 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
1.5 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
1 . Absolute maximum ratings are limiting values above which 2N4118A serviceability may be impaired.  
NOTES 
2.  Due to symmetrical geometry, these units may be operated with source and drain leads interchanged 
3. This parameter is measured during a 2ms interval 100ms after power is applied.  (Not a JEDEC condition.) 
Click To Buy
Available Packages:
2N4118A in TO-71
2N4118A in bare die.
TO-71 (Bottom View)
Please contact Micross for full
package and die dimensions
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
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