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BSS131

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size439KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSS131 Overview

SMALL SIGNAL, FET

BSS131 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE
Minimum drain-source breakdown voltage240 V
Maximum drain current (Abs) (ID)0.1 A
Maximum drain current (ID)0.11 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)4.2 pF
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.36 W
Certification statusNot Qualified
GuidelineCECC
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
Type
BSS131
SIPMOS
®
Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
240
14
0.1
V
Ω
A
PG-SOT-23
Type
BSS131
Parameter
Package
PG-SOT23
Pb-free
Yes
Tape and Reel Information
H6327
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Marking
SRs
Value
0.11
0.09
0.4
Unit
A
Continuous drain current
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.1 A,
V
DS
=192 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD Class
V
GS
JESD22-A114-HBM
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
Class 0
0.36
-55 ... 150
55/150/56
V
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
W
°C
Rev. 2.6
page 1
2012-03-29

BSS131 Related Products

BSS131 BSS131H6327 SP000702620
Description SMALL SIGNAL, FET Drain-source voltage (Vdss): 240V Continuous drain current (Id) (at 25°C): 110mA Gate-source threshold voltage: 1.8V @ 56uA Drain-source on-resistance: 14Ω @ 100mA, 10V Maximum power dissipation (Ta =25°C): 360mW Type: N channel N channel, 240V, 110mA, 14Ω@10V Small Signal Field-Effect Transistor, 0.11A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it Rohs certified? conform to conform to conform to
Maker Infineon Infineon Infineon
Reach Compliance Code compli compliant compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 240 V 240 V 240 V
Maximum drain current (ID) 0.11 A 0.11 A 0.11 A
Maximum drain-source on-resistance 14 Ω 14 Ω 14 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 4.2 pF 4.2 pF 4.2 pF
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Guideline CECC AEC-Q101 AEC-Q101
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED 30 NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Is Samacsys N N -
Maximum drain current (Abs) (ID) 0.1 A 0.11 A -
Humidity sensitivity level 1 1 -
Maximum operating temperature 150 °C 150 °C -
Maximum power dissipation(Abs) 0.36 W 0.36 W -
Base Number Matches 1 1 -
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