Type
BSS131
SIPMOS
®
Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
240
14
0.1
V
Ω
A
PG-SOT-23
Type
BSS131
Parameter
Package
PG-SOT23
Pb-free
Yes
Tape and Reel Information
H6327
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Marking
SRs
Value
0.11
0.09
0.4
Unit
A
Continuous drain current
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.1 A,
V
DS
=192 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD Class
V
GS
JESD22-A114-HBM
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
Class 0
0.36
-55 ... 150
55/150/56
V
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
W
°C
Rev. 2.6
page 1
2012-03-29
BSS131
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Values
typ.
max.
Unit
R
thJA
-
-
350
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
GS(th)
I
D (off)
V
DS
=0 V,
I
D
=56 µA
V
DS
=240 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=240 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=0.09 A
V
GS
=10 V,
I
D
=0.1 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.08 A
240
0.8
-
-
1.4
-
-
1.8
0.01
µA
V
-
-
-
-
0.06
-
-
9.07
7.7
0.13
5
10
20
14
-
S
nA
Ω
Rev. 2.6
page 2
2012-03-29
BSS131
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=0.1 A,
T
j
=25 °C
V
R
=120 V,
I
F
=0.1 A,
di
F
/dt =100 A/µs
T
A
=25 °C
-
-
-
-
-
-
-
0.81
42.9
22.6
0.11
0.43
1.2
64.3
34
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=192 V,
I
D
=0.1 A,
V
GS
=0 to 10 V
-
-
-
-
0.16
0.8
2.1
2.90
0.22
1.2
3.1
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=120 V,
V
GS
=10 V,
I
D
=0.1 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
58
7.3
2.8
3.3
3.1
13.7
64.5
77
10
4.2
5.0
4.6
20
97
ns
pF
Values
typ.
max.
Unit
Rev. 2.6
page 3
2012-03-29
BSS131
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10
V
0.4
0.12
0.1
0.3
0.08
P
tot
[W]
0.2
I
D
[A]
0
40
80
120
160
0.06
0.04
0.1
0.02
0
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
0
limited by on-state
resistance
30 µs
100 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
0.5
10
-1
1 ms
10
2
0.2
Z
thJA
[K/W]
1000
10 ms
I
D
[A]
0.1
100 ms
0.05
10
-2
10
1
0.02
DC
0.01
10
-3
1
10
100
10
0
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
[V]
t
p
[s]
Rev. 2.6
page 4
2012-03-29
BSS131
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
0.4
10 V
5V
3.9 V
7V
4.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
25
23
21
2.3 V
2.7 V
3.3 V
3.9 V
0.3
19
0.2
3.3 V
R
DS(on)
[Ω]
17
15
13
11
4.5 V
5V
I
D
[A]
0.1
2.7 V
9
2.3 V
7V
10 V
7
0
0
1
2
3
4
5
6
7
5
0
0.1
0.2
0.3
0.4
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
0.3
0.4
0.25
0.3
0.2
g
fs
[S]
0
1
2
3
4
I
D
[A]
0.15
0.2
0.1
0.1
0.05
0
0
0.0
0.1
0.2
0.3
0.4
V
GS
[V]
I
D
[A]
Rev. 2.6
page 5
2012-03-29
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