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2N7002/E8

Description
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size104KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

2N7002/E8 Overview

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

2N7002/E8 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH INPUT IMPEDENCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.23 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N7002
N-Channel Enhancement-Mode MOSFET
V
DS
60V
R
DS(ON)
3.0Ω
I
D
230mA
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
CH
EN ET
R
T
N
F
E
TM
0.031 (0.8)
G
.045 (1.15)
.037 (0.95)
0.035 (0.9)
0.079 (2.0)
Pin Configuration
1.
Gate
2.
Source
3.
Drain
1
2
max. .004 (0.1)
0.037 (0.95)
0.037 (0.95)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
Mounting Pad Layout
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
S72
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Features
• Advanced Trench Process Technology
• High density cell design for ultra-low on-resistance
• High input impedance
• High-speed switching
• No minority carrier storage time
• CMOS logic compatible input
• No secondary breakdown
(T
A
= 25°C unless otherwise noted)
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Gate-Source-Voltage
Continuous Drain Current
T
J
= 150°C
Pulsed Drain Current
(1)
Maximum Power Dissipation
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
θJA
Limit
60
±
20
Unit
V
V
mA
mA
mW
°C
°C/W
230
180
1300
300
192
–55 to +150
417
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance
Note:
(1) Pulse test, pulse width
300µs, duty cycle
2%
3/8/01

2N7002/E8 Related Products

2N7002/E8 2N7002/E9
Description Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features HIGH INPUT IMPEDENCE HIGH INPUT IMPEDENCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 0.23 A 0.23 A
Maximum drain-source on-resistance 7.5 Ω 7.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 5 pF 5 pF
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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