IRFD113 datasheet, PDF - EEWORLD Datasheet

IRFD113: DescriptionPower Field-Effect Transistor, 0.17A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO MO-001AN, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size36KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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Power Field-Effect Transistor, 0.17A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO MO-001AN, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIP
package instruction	IN-LINE, R-PDIP-T3
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	0.8 A
Maximum drain current (ID)	0.17 A
Maximum drain-source on-resistance	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1 W
Maximum pulsed drain current (IDM)	6.9 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Transistor component materials	SILICON

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