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PTFB191501F: DescriptionThermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 鈥?1990 MHz; File Size278KB，15 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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PTFB191501F Overview

Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 鈥?1990 MHz

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PTFB191501E

PTFB191501F

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs

150 W, 1930 – 1990 MHz

Description

The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs

designed for single- and two-carrier WCDMA and CDMA applications

from 1930 to 1990 MHz. Features include input and output matching,

and thermally-enhanced, RoHs-compliant package with slotted and

earless flanges. Manufactured with Infineon's advanced LDMOS

process, these devices provide excellent thermal performance and

superior reliability.

PTFB191501E

Package H-36248-2

PTFB191501F

Package H-37248-2

Two-carrier WCDMA Drive-up

= 30 V, I

= 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,

PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz

-20

-25

-30

Features

•

Broadband internal matching

Typical two-carrier WCDMA performance at

1990 MHz, 30 V

- Average output power = 35 W

- Linear gain = 18 dB

- Efficiency = 30%

- Intermodulation distortion = –35 dBc

Typical CW performance, 1990 MHz, 30 V

- Output power at P–1dB = 150 W

- Efficiency = 55%

Increased negative gate-source voltage range for

improved performance in Doherty peaking

amplifiers

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 30 V, 150 W

(CW) output power

Pb-free, RoHS-compliant

Efficiency

IMD Up

Efficiency (%)

IMD (dBc)

-35

-40

-45

-50

-55

-60

•

IMD Low

ACPR

•

Output Power (dBm)

RF Characteristics

Two-carrier WCDMA Measurements

(not subject to production test—verified by design/characterization in Infineon test fixture)

= 30 V, I

= 1.2 A, P

OUT

= 35 W average, ƒ

= 1985 MHz, ƒ

= 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Drain Efficiency

Intermodulation Distortion

All published data at T

CASE

= 25°C unless otherwise indicated

Symbol

Min

—

Typ

–35

Max

—

Unit

dBc

IMD

*See Infineon distributor for future availability.

ESD:

Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet

1 of 15

Rev. 02, 2009-09-09

PTFB191501F Related Products

	PTFB191501F	PTFB191501E
Description	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 鈥?1990 MHz	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 鈥?1990 MHz

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