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SIGC07T60SNC

Description
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
CategoryDiscrete semiconductor    The transistor   
File Size75KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

SIGC07T60SNC Overview

IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

SIGC07T60SNC Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
Parts packaging codeDIE
package instructionUNCASED CHIP, S-XUUC-N2
Contacts2
Reach Compliance Codecompli
Is SamacsysN
Maximum collector current (IC)6 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Maximum landing time (tf)84 ns
Gate emitter threshold voltage maximum5 V
Gate-emitter maximum voltage20 V
JESD-30 codeS-XUUC-N2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
Maximum rise time (tr)20 ns
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)318 ns
Nominal on time (ton)41 ns
Base Number Matches1
SIGC07T60SNC
IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100µm chip
short circuit prove
positive temperature coefficient
easy paralleling
C
This chip is used for:
DuoPack SKP06N60
Applications:
drives
G
E
Chip Type
SIGC07T60SNC
SIGC07T60SNC
V
CE
600V
600V
I
Cn
6A
6A
Die Size
2.6 x 2.6 mm
2
2.6 x 2.6 mm
2
Package
sawn on foil
unsawn
Ordering Code
Q67041-A4672-
A003
Q67041-A4672-
A002
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
2.6 x 2.6
6.76 / 4.3
1.107 x 1.78
0.5 x 0.7
100
150
0 //180
2249
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al,
≤500µm
0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
2
mm
deg
Edited by INFINEON Technologies AI PS DD HV3, L 7212-S, Edition 2, 28.11.2003

SIGC07T60SNC Related Products

SIGC07T60SNC HCHP0805K2083DFPA Q67041-A4672-A003
Description IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient Fixed Resistor, Metal Glaze/thick Film, 0.2W, 208000ohm, 150V, 0.5% +/-Tol, 100ppm/Cel, Surface Mount, 0805, CHIP Insulated Gate Bipolar Transistor
Reach Compliance Code compli unknown compliant
Is it Rohs certified? conform to conform to -
package instruction UNCASED CHIP, S-XUUC-N2 SMT, 0805 -
Number of terminals 2 2 -
Maximum operating temperature 150 °C 155 °C -
Package form UNCASED CHIP SMT -
surface mount YES YES -
Base Number Matches 1 - 1
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