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SIGC100T60R3

Description
600V Trench & Field Stop technology positive temperature coefficient
CategoryDiscrete semiconductor    The transistor   
File Size119KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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SIGC100T60R3 Overview

600V Trench & Field Stop technology positive temperature coefficient

SIGC100T60R3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeDIE
package instruction9.73 X 10.23 MM, DIE-10
Contacts10
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)200 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUUC-N10
Number of components1
Number of terminals10
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Base Number Matches1
SIGC100T60R3
IGBT Chip
Features:
600V Trench & Field Stop technology
low V
CE(sat)
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
This chip is used for:
power module
Applications:
drives
3
C
G
E
Chip Type
SIGC100T60R3
V
CE
600V
I
C
200A
Die Size
9.73 x 10.23 mm
2
Package
sawn on foil
Mechanical Parameter
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
9.73 x 10.23
( 4.256 x 1.938 ) x 4
( 4.256 x 2.356 ) x 4
1.615 x 0.817
99.5
70
150
126
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
µm
mm
mm
2
Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010

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