SMBTA56/MMBTA56
PNP Silicon AF Transistor
•
Low collector-emitter saturation voltage
•
Complementary type: SMBTA06 / MMBTA06(NPN)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
SMBTA56/MMBTA56
Marking
s2G
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
S
≤
79°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
Pb-containing
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
Value
80
80
4
500
1
100
200
330
150
-65 ... 150
Value
≤
215
Unit
V
mA
A
mA
mW
°C
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19
SMBTA56/MMBTA56
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
80
V
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
80
4
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 80 V,
I
E
= 0
V
CB
= 80 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
CEO
h
FE
-
-
-
0.1
20
0.1
-
Collector-emitter cutoff current
V
CE
= 60 V,
I
B
= 0
-
DC current gain
1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
100
100
V
CEsat
V
BE(ON)
-
-
-
-
-
-
0.25
1.2
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
-
-
Base-emitter voltage
1)
I
C
= 100 mA,
V
CE
= 1 V
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 20 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1
Pulse
f
T
C
cb
-
-
100
7
-
-
MHz
pF
test: t < 300µs; D < 2%
2
2007-04-19
SMBTA56/MMBTA56
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 1 V
EHP00852
Collector-emitter saturation voltage
I
C
=
ƒ
(V
CEsat
),
h
FE
= 10
10
3
mA
EHP00850
10
3
h
FE
100 C
10
2
25 C
Ι
C
100 C
25 C
-50C
10
2
5
-50 C
10
1
10
1
5
10
0 -1
10
10
0
10
1
10
2
mA 10
3
10
0
0.0
0.5
V
V
CEsat
1.0
Ι
C
Base-emitter saturation voltage
I
C
=
ƒ
(V
BEsat
),
h
FE
= 10
10
3
mA
EHP00849
Collector current
I
C
=
ƒ
(V
BE
)
V
CE
= 1V
EHP00846
10
3
Ι
C
10
2
5
100 ˚C
25 ˚C
-50 ˚C
mA
Ι
C
10
2
5
100 C
25 C
-50 C
10
1
5
10
1
5
10
0
5
10
0
5
10
-1
0
0.5
1.0
V
V
BEsat
1.5
10
-1
0
0.5
1.0
V
BE
V
1.5
3
2007-04-19
SMBTA56/MMBTA56
Collector cutoff current
I
CBO
=
ƒ
(T
A
)
V
CB
= 80 V
EHP00851
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= parameter in V,
f
= 2 GHz
10
3
MHz
f
T
5
EHP00848
10
nA
4
Ι
CBO
10
3
5
10
2
5
10
1
5
10
0
5
10
-1
0
50
max
10
2
typ
5
100
T
A
C 150
10
1
10
0
5 10
1
5 10
2
mA
10
3
Ι
C
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
Emitter-base capacitance
C
eb
=
ƒ
(V
EB
)
65
pF
55
Total power dissipation
P
tot
=
ƒ
(T
S
)
360
mW
300
270
C
CB
(C
EB
)
50
45
40
35
P
tot
CEB
CCB
240
210
180
30
25
20
15
10
5
0
0
4
8
12
16
V
150
120
90
60
30
0
0
15
30
45
60
75
90 105 120
22
V
CB
(V
EB
)
°C
150
T
S
4
2007-04-19
SMBTA56/MMBTA56
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
3
K/W
10
4
10
2
P
totmax
/
P
totDC
10
3
10
1
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
0
10
-1 -7
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
-6
10
1
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
2007-04-19
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