JANTXV2N6661 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> JANTXV2N6661

JANTXV2N6661: DescriptionSmall Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size73KB，17 Pages; ManufacturerDefense Logistics Agency

Download Datasheet Parametric Compare View All

JANTXV2N6661 Overview

Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN

JANTXV2N6661 Parametric

Parameter Name	Attribute value
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW THRESHOLD
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	90 V
Maximum drain current (ID)	0.86 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Qualified
Guideline	MIL
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 30 October 1999

INCH-POUND

MIL-PRF-19500/547B

30 July 1999

SUPERSEDING

MIL-S-19500/547A

20 January 1988

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

SILICON TYPES 2N6660 AND 2N6661

JAN, JANTX, JANTXV AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level,

high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated

device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-205AD).

1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.

Type

PT 1/

TC = +25°C TA = +25°C

2N6660

2N6661

6.25

725

VDS

VDGR

V dc

VGS

ID1 2/

ID2 2/

TC = +25°C TC = +100°C

A dc

0.99

0.86

A dc

0.62

0.54

IDM

TJ and

TSTG

°C

-65 to +150

A dc

-0.99

-0.86

A(pk)

1/ Derate linearly 0.05 W/°C for TC > +25°C

2/ Derate above TC = +25

°C

according to the formula

where P(rated) = 150 - (TC -25) (0.05) watts;

K = max r

DS(on)

at TJ =+150°C.

3/ R

≤

1 M ohm.

(

rated

)

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

MIL-PRF-19500/547B

3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of

lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.3.2 Internal construction. Multiple chip construction shall not be permitted.

3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.

3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.

The following handling practices shall be followed:

Devices shall be handled on benches with conductive handling devices.

Ground test equipment, tools, and personnel handling devices.

Do not handle devices by the leads.

Store devices in conductive foam or carriers.

Avoid use of plastic, rubber, or silk in MOS areas.

Maintain relative humidity above 50 percent if practical.

Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.

Gate must be terminated to source, R

≤

100 k, whenever bias voltage is to be applied drain to source.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as

specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing

on the applicable qualified manufacturer's list before contract award (see 4.2 and 6.3 ).

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein. Alternate flow is allowed

for qualification inspection in accordance with figure 4 of MIL-PRF-19500.

4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and herein.

JANTXV2N6661 Related Products

	JANTXV2N6661	JANTXV2N6660	JANTX2N6660	JANTX2N6661	JAN2N6661	JAN2N6660
Description	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN	Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN	Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN	Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN	Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN
Parts packaging code	BCY	BCY	BCY	BCY	BCY	BCY
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	TO-39, 3 PIN
Contacts	2	2	2	2	2	2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	90 V	60 V	60 V	90 V	90 V	60 V
Maximum drain current (ID)	0.86 A	0.99 A	0.99 A	0.86 A	0.86 A	0.99 A
Maximum drain-source on-resistance	4 Ω	3 Ω	3 Ω	4 Ω	4 Ω	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF	10 pF	10 pF	10 pF	10 pF	10 pF
JEDEC-95 code	TO-205AD	TO-205AD	TO-205AD	TO-205AD	TO-205AD	TO-205AD
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Qualified	Qualified	Qualified	Qualified	Qualified	Qualified
Guideline	MIL	MIL	MIL	MIL	MIL	MIL
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	-

Recommended Resources

Fishing game circuit

Yijia brand CJX-150A thousand-wing turbine range hood circuit diagram

Basic circuit diagram of LM2941C

Pulse width speed regulation micromotor speed regulation circuit

1RTl260 (TV and recorder) infrared remote control transmitter circuit

Infrared remote control detector

Gold Miner Game: http://www.4399.com/flash/1602_2.htm?800...; gaoyanmei Talking

How to quickly know whether the node is connected to the network: How can I quickly know whether the Zigbee node has been added to the network and whether it can communicate with the coordinator immediately? My coordinator sometimes receives the message quickly, and...; 月月牙儿弯 RF/Wirelessly

I need help. There is no Luminary Eva Board in my KEIL DEBUG. I don't know how to use the USB emulator. Please help me.: I configured KEIL according to the information on the PDF, but found that there was no Luminary Eva Board option in DEBUG, nor in Utilities.How to use the USB emulator? Please help...; sylar_d Microcontroller MCU

Mixer implemented using operational amplifier: Mixers are often implemented using a diode bridge or a Gilbert cell. Both types of mixers use a local oscillator (LO) to flip the polarity of the RF input. When the LO is positive, the RF input does n...; maker RF/Wirelessly

12864 display problem, the board needs to be powered on twice in succession to display normally: I use stm32 to drive 12864 LCD. After writing, I found that the board needs to be powered on twice in quick succession before it can display. It feels very strange. I would like to ask the experts who...; 冷板凳 stm32/stm8

Please help me with 9B96 Ethernet issue!: I used a board I made myself (the main chip is 9L97 and similar to 9B96) to debug the Ethernet module from the most basic LWip. I used the first program in the forum academic post https://bbs.eeworld....; 轻轨002 Microcontroller MCU

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components