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JAN2N6660

Description
Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size73KB,17 Pages
ManufacturerDefense Logistics Agency
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JAN2N6660 Overview

Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN

JAN2N6660 Parametric

Parameter NameAttribute value
MakerDefense Logistics Agency
Parts packaging codeBCY
package instructionTO-39, 3 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.99 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusQualified
GuidelineMIL
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 30 October 1999
INCH-POUND
MIL-PRF-19500/547B
30 July 1999
SUPERSEDING
MIL-S-19500/547A
20 January 1988
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,
SILICON TYPES 2N6660 AND 2N6661
JAN, JANTX, JANTXV AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level,
high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-205AD).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
PT 1/
PT
TC = +25°C TA = +25°C
W
2N6660
2N6661
6.25
6.25
mW
725
725
VDS
VDGR
3/
V dc
60
90
V dc
60
90
V dc
±
20
±
20
VGS
ID1 2/
ID2 2/
TC = +25°C TC = +100°C
A dc
0.99
0.86
A dc
0.62
0.54
IS
IDM
TJ and
TSTG
°C
-65 to +150
A dc
-0.99
-0.86
A(pk)
3
3
1/ Derate linearly 0.05 W/°C for TC > +25°C
2/ Derate above TC = +25
°C
according to the formula
where P(rated) = 150 - (TC -25) (0.05) watts;
K = max r
DS(on)
at TJ =+150°C.
3/ R
GS
1 M ohm.
I
D
=
P
(
rated
)
K
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

JAN2N6660 Related Products

JAN2N6660 JANTXV2N6660 JANTX2N6660 JANTXV2N6661 JANTX2N6661 JAN2N6661
Description Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Small Signal Field-Effect Transistor, 0.99A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN
Parts packaging code BCY BCY BCY BCY BCY BCY
package instruction TO-39, 3 PIN CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 2 2 2 2 2 2
Reach Compliance Code unknown unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 90 V 90 V 90 V
Maximum drain current (ID) 0.99 A 0.99 A 0.99 A 0.86 A 0.86 A 0.86 A
Maximum drain-source on-resistance 3 Ω 3 Ω 3 Ω 4 Ω 4 Ω 4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 10 pF 10 pF 10 pF 10 pF 10 pF 10 pF
JEDEC-95 code TO-205AD TO-205AD TO-205AD TO-205AD TO-205AD TO-205AD
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Qualified Qualified Qualified Qualified Qualified Qualified
Guideline MIL MIL MIL MIL MIL MIL
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches - 1 1 1 1 1
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