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PT4850FE000F

Description
Photo Transistor, 860nm,
CategoryLED optoelectronic/LED    photoelectric   
File Size960KB,9 Pages
ManufacturerSHARP
Websitehttp://sharp-world.com/products/device/
Environmental Compliance
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PT4850FE000F Overview

Photo Transistor, 860nm,

PT4850FE000F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSHARP
Reach Compliance Codeunknown
Other featuresSIDE VIEW
Coll-Emtr Bkdn Voltage-Min35 V
ConfigurationSINGLE
Maximum dark power100 nA
Infrared rangeYES
JESD-609 codee1
Nominal photocurrent0.12 mA
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesPHOTO TRANSISTOR
peak wavelength860 nm
shapeROUND
size0.8 mm
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
PT4850FE000F
PT4850FE000F
Opaque Resin, Medium Directivity Angle,
Thin Package, Narrow I
C
Range
Phototransistor
Features
1.
2.
3.
4.
5.
6.
Side view detection thin package
Plastic mold with opaque resin lens
Peak sensitivity wavelength: 800 nm (TYP.)
Medium directivity angle (Δθ ±35° TYP.)
Narrow I
C
range: 0.12 µA < I
C
< 0.56 µA
Lead free and RoHS directive compliant
Agency Approvals/Compliance
1. Compliant with RoHS directive (2002/95/EC)
2. Content information about the six substances
specified in “Management Methods for Control of
Pollution Caused by Electronic Information Prod-
ucts Regulation” (popular name: China RoHS)
(Chinese:
);
refer to page 7.
Applications
1.
2.
3.
4.
Telecommunications equipment
Home Appliances
Office automation equipment
Audio visual equipment
Notice The content of this data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D1-A02301EN
Date: November 30, 2007
©SHARP Corporation
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