MRF6S21140HSR3 datasheet, PDF - EEWORLD Datasheet

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MRF6S21140HSR3: DescriptionS BAND, Si, N-CHANNEL, RF POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size824KB，14 Pages; ManufacturerFREESCALE (NXP)

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S BAND, Si, N-CHANNEL, RF POWER, MOSFET

MRF6S21140HSR3 Parametric

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	68 V
Processing package description	ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	DISCONTINUED
packaging shape	Rectangle
Package Size	FLATPACK
surface mount	Yes
Terminal form	FLAT
terminal coating	NOT SPECIFIED
Terminal location	pair
Packaging Materials	Ceramic, Metal-SEALED COFIRED
structure	single
Shell connection	source
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	RF power
highest frequency band	S band

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Freescale Semiconductor

Technical Data

Document Number: MRF6S21140H

Rev. 5, 2/2010

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN--PCS/cellular radio and WLL

applications.

•

Typical 2--carrier W--CDMA Performance: V

= 28 Volts, I

= 1200 mA,

out

= 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 15.5 dB

Drain Efficiency — 27.5%

IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth

•

Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Internally Matched for Ease of Use

•

Qualified Up to a Maximum of 32 V

Operation

•

Integrated ESD Protection

•

Optimized for Doherty Applications

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF6S21140HR3

MRF6S21140HSR3

2110-

-2170 MHz, 30 W AVG., 28 V

2 x W-

-CDMA

LATERAL N-

-CHANNEL

RF POWER MOSFETs

CASE 465B-

-03, STYLE 1

NI-

-880

MRF6S21140HR3

CASE 465C-

-02, STYLE 1

NI-

-880S

MRF6S21140HSR3

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

--0.5, +68

--0.5, +12

-- 65 to +150

150

225

Unit

Vdc

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 140 W CW

Case Temperature 75°C, 30 W CW

Symbol

θJC

Value

(2,3)

0.35

0.38

Unit

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955/D,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf. Select

Documentation/Application Notes -- AN1955.

MRF6S21140HR3 MRF6S21140HSR3

RF Device Data

Freescale Semiconductor

MRF6S21140HSR3 Related Products

	MRF6S21140HSR3	MRF6S21140HR3_10
Description	S BAND, Si, N-CHANNEL, RF POWER, MOSFET	S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Number of terminals	2	3
Minimum breakdown voltage	68 V	68 V
Processing package description	ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN	ROHS COMPLIANT, NI-880, CASE 465B-03, 3 PIN
Lead-free	Yes	Yes
state	DISCONTINUED	ACTIVE
packaging shape	Rectangle	RECTANGULAR
Package Size	FLATPACK	FLANGE MOUNT
surface mount	Yes	Yes
Terminal form	FLAT	FLAT
terminal coating	NOT SPECIFIED	NOT SPECIFIED
Terminal location	pair	DUAL
Packaging Materials	Ceramic, Metal-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
structure	single	SINGLE
Shell connection	source	SOURCE
Number of components	1	1
transistor applications	amplifier	AMPLIFIER
Transistor component materials	silicon	SILICON
Channel type	N channel	N-CHANNEL
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	RF power	RF POWER
highest frequency band	S band	S BAND

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