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MRF6S21140HR3_10

Description
S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size824KB,14 Pages
ManufacturerFREESCALE (NXP)
Download Datasheet Parametric Compare View All

MRF6S21140HR3_10 Overview

S BAND, Si, N-CHANNEL, RF POWER, MOSFET

MRF6S21140HR3_10 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage68 V
Processing package descriptionROHS COMPLIANT, NI-880, CASE 465B-03, 3 PIN
Lead-freeYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
surface mountYes
Terminal formFLAT
terminal coatingNOT SPECIFIED
Terminal locationDUAL
Packaging MaterialsCERAMIC, METAL-SEALED COFIRED
structureSINGLE
Shell connectionSOURCE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeRF POWER
highest frequency bandS BAND
Freescale Semiconductor
Technical Data
Document Number: MRF6S21140H
Rev. 5, 2/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
Typical 2--carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1200 mA,
P
out
= 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 27.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21140HR3
MRF6S21140HSR3
2110-
-2170 MHz, 30 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465B-
-03, STYLE 1
NI-
-880
MRF6S21140HR3
CASE 465C-
-02, STYLE 1
NI-
-880S
MRF6S21140HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 75°C, 30 W CW
Symbol
R
θJC
Value
(2,3)
0.35
0.38
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2004--2007, 2010. All rights reserved.
MRF6S21140HR3 MRF6S21140HSR3
1
RF Device Data
Freescale Semiconductor

MRF6S21140HR3_10 Related Products

MRF6S21140HR3_10 MRF6S21140HSR3
Description S BAND, Si, N-CHANNEL, RF POWER, MOSFET S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Number of terminals 3 2
Minimum breakdown voltage 68 V 68 V
Processing package description ROHS COMPLIANT, NI-880, CASE 465B-03, 3 PIN ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN
Lead-free Yes Yes
state ACTIVE DISCONTINUED
packaging shape RECTANGULAR Rectangle
Package Size FLANGE MOUNT FLATPACK
surface mount Yes Yes
Terminal form FLAT FLAT
terminal coating NOT SPECIFIED NOT SPECIFIED
Terminal location DUAL pair
Packaging Materials CERAMIC, METAL-SEALED COFIRED Ceramic, Metal-SEALED COFIRED
structure SINGLE single
Shell connection SOURCE source
Number of components 1 1
transistor applications AMPLIFIER amplifier
Transistor component materials SILICON silicon
Channel type N-CHANNEL N channel
field effect transistor technology METAL-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type RF POWER RF power
highest frequency band S BAND S band
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