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BSH203T/R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size114KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BSH203T/R Overview

Transistor

BSH203T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.5 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
FEATURES
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
BSH203
SYMBOL
s
QUICK REFERENCE DATA
V
DS
= -30 V
I
D
= -0.47 A
R
DS(ON)
1.1
(V
GS
= -2.5 V)
V
GS(TO)
0.4 V
d
g
GENERAL DESCRIPTION
P-channel, enhancement mode,
logic level, field-effect power
transistor. This device has low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH203 is supplied in the
SOT23
subminiature
surface
mounting package.
PINNING
PIN
1
2
3
gate
source
drain
DESCRIPTION
SOT23
3
Top view
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
R
GS
= 20 kΩ
T
a
= 25 ˚C
T
a
= 100 ˚C
T
a
= 25 ˚C
T
a
= 25 ˚C
T
a
= 100 ˚C
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
-30
-30
±
8
-0.47
-0.3
-1.9
0.417
0.17
150
UNIT
V
V
V
A
A
A
W
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-a
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
TYP.
300
MAX.
-
UNIT
K/W
August 1998
1
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