BAS70T/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
UNDER DEVELOPMENT
SOT-523
TOP VIEW
NEW PRODCUT
·
·
·
·
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
Ultra-Small Surface Mount Package
Dim
A
B
B
C
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
Mechanical Data
·
·
·
·
·
·
Case: SOT-523, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Diagram
Weight: 0.002 grams (approx.)
Ordering Information, see Sheet 2
G
H
K
A
C
D
G
H
J
K
L
M
N
N
M
J
D
L
All Dimensions in mm
BAS70T Marking: 7C
BAS70T-04 Marking: 7D
BAS70T-05 Marking: 7E
BAS70T-06 Marking: 7F
Maximum Ratings and Electrical Characteristics, Single Diode
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t
p
<
1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FSM
P
d
R
qJA
T
j
T
STG
BAS70T
70
49
70
100
150
833
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
FM
I
RM
C
j
t
rr
Min
70
—
¾
¾
—
Max
—
410
1000
100
2.0
5.0
Unit
—
mV
nA
pF
ns
Test Condition
I
R
= 10mA
t
p
<300µs, I
F
= 1.0mA
t
p
<300µs, I
F
= 15mA
t
p
< 300µs, V
R
= 50V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA to I
R
= 1.0mA,
Irr = 0.1 x I
R
, R
L
= 100W
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Peak Reverse Current
Junction Capacitance
Reverse Recovery Time
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout, minimum.
2. Test period <3000ms.
DS30261 Rev. A-1
1 of 2
BAS70T/ -04/ -05/ -06
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