
RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DR, 4 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | TT Electronics plc |
| package instruction | FLANGE MOUNT, R-CDFM-F4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Minimum drain-source breakdown voltage | 65 V |
| Maximum drain current (ID) | 4 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-CDFM-F4 |
| JESD-609 code | e4 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | GOLD |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |