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BFM35G4

Description
RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DR, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size49KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

BFM35G4 Overview

RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, DR, 4 PIN

BFM35G4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionFLANGE MOUNT, R-CDFM-F4
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum drain-source breakdown voltage65 V
Maximum drain current (ID)4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
JESD-609 codee4
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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