BB603M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-816D (Z)
5th. Edition
Dec. 2000
Features
•
Build in Biasing Circuit; To reduce using parts cost & PC board space.
•
Low noise; NF = 1.8 dB typ. at f =900 MHz
•
High gain; PG = 22 dB typ. at f = 900 MHz
•
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
•
Provide mini mold packages; MPAK-4R (SOT-143var.)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes:
1.
2.
Marking is “CT–”.
BB603M is individual type number of HITACHI BBFET.
BB603M
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
20
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
Min
6
+6
+6
—
—
0.5
0.5
7
19
1.4
0.7
—
17
—
Typ
—
—
—
—
—
0.7
0.7
10
24
1.7
1.1
0.025
22
1.8
Max
—
—
—
+100
+100
1.0
1.0
13
29
2.0
1.5
0.05
—
2.4
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
Test Conditions
I
D
= 200µA, V
G1S
= V
G2S
= 0
I
G1
= +10µA, V
G2S
= V
DS
= 0
I
G2
= +10µA, V
G1S
= V
DS
= 0
V
G1S
= +5V, V
G2S
= V
DS
= 0
V
G2S
= +5V, V
G1S
= V
DS
= 0
V
DS
= 5V, V
G2S
= 4V, I
D
= 100µA
V
DS
= 5V, V
G1S
= 5V, I
D
= 100µA
V
DS
= 5V, V
G1
= 5V
V
G2S
= 4V, R
G
= 47kΩ
V
DS
= 5V, V
G1
= 5V, V
G2S
=4V
R
G
= 47kΩ, f = 1kHz
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 47kΩ
f = 1MHz
V
DS
= 5V, V
G1
= 5V
V
G2S
=4V, R
G
= 47kΩ
f = 900MHz
Gate1 to source cutoff current I
G1SS
Gate2 to source cutoff current I
G2SS
Gate1 to source cutoff voltage V
G1S(off)
Gate2 to source cutoff voltage V
G2S(off)
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
I
D(op)
|y
fs
|
Ciss
Coss
Crss
PG
NF
2
BB603M
Test Circuits
•
DC Biasing Circuit for Operating Characteristics Items
(I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
V
G1
R
G
Gate 1
Gate 2
V
G2
Source
Drain
A
I
D
3
BB603M
•
900 MHz Power Gain, Noise Figure Test Circuit
VG1 VG2
C4
C5
VD
C6
R1
R2
C3
G2
R3
D
L3
RFC
Output
L4
Input
L1
L2
G1
S
C1
C2
C1, C2
C3
C4 to C6
R1
R2
R3
:
:
:
:
:
:
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
47 kΩ
47 kΩ
4.7 kΩ
L1:
10
10
L2:
26
3
3
(Φ1mm Copper wire)
Unit:mm
8
21
L4:
29
10
7
7
10
L3:
18
RFC :
Φ1mm
Copper wire with enamel 4turns inside dia 6mm
4
BB603M
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
20
I
D
(mA)
V
G2S
= 4 V
V
G1
= V
DS
16
22
k
Ω
Pch (mW)
Channel Power Dissipation
200
150
12
Drain Current
100
RG
=
8
50
4
k
Ω
47
Ω
68 k
k
Ω
100
33
k
Ω
0
50
100
150
Ta (°C)
200
0
Ambient Temperature
1
2
3
Drain to Source Voltage
4
5
V
DS
(V)
Drain Current vs. Gate1 Voltage
20
I
D
(mA)
V
DS
= 5 V
R
G
= 33 k
Ω
2V
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 47 k
Ω
16
2V
12
4V
8
3V
I
D
(mA)
16
12
4V
3V
Drain Current
8
4
V
G2S
= 1 V
Drain Current
4
V
G2S
= 1 V
0
1
2
Gate1 Voltage
3
V
G1
4
(V)
5
0
1
2
3
Gate1 Voltage V
G1
4
(V)
5
5
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