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BSP52E6327HTSA1

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size119KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSP52E6327HTSA1 Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4

BSP52E6327HTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
BSP50-BSP52
NPN Silicon Darlington Transistors
High collector current
Low collector-emitter saturation voltage
Complementary types: BSP60 - BSP52 (PNP)
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
4
2
1
3
Type
BSP50
BSP51
BSP52
Maximum Ratings
Parameter
Marking
BSP50
BSP51
BSP52
1=B
1=B
1=B
2=C
2=C
2=C
Pin Configuration
3=E
3=E
3=E
4=C
4=C
4=C
-
-
-
-
-
-
Package
SOT223
SOT223
SOT223
Symbol
V
CEO
Value
45
60
80
Unit
V
Collector-emitter voltage
BSP50
BSP51
BSP52
Collector-base voltage
BSP50
BSP51
BSP52
Emitter-base voltage
Collector current
Peak collector current
Base current
Total power dissipation-
T
S
124 °C
Junction temperature
Storage temperature
1
Pb-containing
V
CBO
60
80
90
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
5
1
2
100
1.5
150
-65 ... 150
mA
W
°C
A
package may be available upon special request
1
2007-03-30

BSP52E6327HTSA1 Related Products

BSP52E6327HTSA1 BSP51E6327HTSA1 BSP51-E6327 BSP51-E6433
Description Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4 Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4 Transistor Transistor
Is it Rohs certified? conform to conform to conform to incompatible
Maker Infineon Infineon Infineon Infineon
Reach Compliance Code compliant compliant unknown unknown
Maximum collector current (IC) 1 A 1 A 1 A 1 A
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 2000 2000 1000 1000
Polarity/channel type NPN NPN NPN NPN
surface mount YES YES YES YES
ECCN code EAR99 EAR99 EAR99 -
Humidity sensitivity level 1 1 1 -
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