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BZG05C3V6

Description
Zener Diode, 3.6V V(Z), 5.6%, 1.25W, Silicon, Unidirectional, DO-214AC,
CategoryDiscrete semiconductor    diode   
File Size47KB,5 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
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BZG05C3V6 Overview

Zener Diode, 3.6V V(Z), 5.6%, 1.25W, Silicon, Unidirectional, DO-214AC,

BZG05C3V6 Parametric

Parameter NameAttribute value
MakerTEMIC
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation1.25 W
Certification statusNot Qualified
Nominal reference voltage3.6 V
surface mountYES
technologyZENER
Terminal formC BEND
Terminal locationDUAL
Maximum voltage tolerance5.6%
Working test current60 mA
BZG05C...
Silicon Z–Diodes
Features
D
D
D
D
D
Glass passivated junction
High reliability
Voltage range 3.3V to 15V
Fits onto 5 mm SMD footpads
Wave and reflow solderable
Applications
Voltage stabilization
94 9535
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
p
Non repetitive peak surge
power dissipation
Junction temperature
Storage temperature range
Test Conditions
R
thJA
<30K/W, T
amb
=60
°
C
R
thJA
<100K/W, T
amb
=25
°
C
t
p
=100
m
s sq.pulse, T
j
=25
°
C
prior to surge
Type
Symbol
P
V
P
V
P
ZSM
T
j
T
stg
Value
3
1.25
60
150
–65...+150
Unit
W
W
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction lead
Junction ambient
Test Conditions
mounted on epoxy–glass hard tissue, Fig. 1a
mounted on epoxy–glass hard tissue, Fig. 1b
mounted on Al–oxid–ceramic (Al
2
O
3
), Fig. 1b
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
30
150
125
100
Unit
K/W
K/W
K/W
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=0.2A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
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