DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | R-PDSO-G2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES |
| Minimum breakdown voltage | 30 V |
| Configuration | SINGLE |
| Minimum diode capacitance ratio | 19.5 |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY |
| JESD-30 code | R-PDSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Certification status | Not Qualified |
| Maximum reverse current | 0.01 µA |
| Reverse test voltage | 30 V |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| BB620 | BB134-T | BB150-T | BB911/AT/R | BB158-T | BB159-T | BB620-T | BB405BT/R | BB811 | BB811-T | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | DIODE UHF BAND, 17.5 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | DIODE VHF BAND, 42 pF, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | DIODE VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode | DIODE VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | DIODE UHF BAND, 18.75 pF, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | DIODE VHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | DIODE UHF BAND, 11 pF, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode | DIODE UHF-L BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode | DIODE UHF-L BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode |
| Maker | NXP | NXP | NXP | NXP | NXP | NXP | NXP | NXP | NXP | NXP |
| Reach Compliance Code | unknown | unknown | unknown | compliant | unknown | unknown | unknown | compliant | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum diode capacitance ratio | 19.5 | 8.9 | 14 | 23.3 | 14.5 | 8.2 | 19.5 | 7.6 | 7.8 | 7.8 |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY | ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY | ULTRA HIGH FREQUENCY | ULTRA HIGH FREQUENCY TO L BAND | ULTRA HIGH FREQUENCY TO L BAND |
| JESD-30 code | R-PDSO-G2 | R-PDSO-G2 | R-PDSO-G2 | O-LALF-W2 | R-PDSO-G2 | R-PDSO-G2 | R-PDSO-G2 | O-LALF-W2 | R-PDSO-G2 | R-PDSO-G2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | GLASS | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | GLASS | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | LONG FORM | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | LONG FORM | SMALL OUTLINE | SMALL OUTLINE |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | NO | YES | YES | YES | NO | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | WIRE | GULL WING | GULL WING | GULL WING | WIRE | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | AXIAL | DUAL | DUAL | DUAL | AXIAL | DUAL | DUAL |
| package instruction | R-PDSO-G2 | R-PDSO-G2 | R-PDSO-G2 | - | R-PDSO-G2 | R-PDSO-G2 | R-PDSO-G2 | - | R-PDSO-G2 | R-PDSO-G2 |
| Other features | CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES | 0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE | - | MATCHED TO 2.5% | - | - | CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES | MATCHED TO 3% | CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES | CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES |
| Minimum breakdown voltage | 30 V | 30 V | - | - | 30 V | - | 30 V | - | 30 V | 30 V |
| Maximum operating temperature | 125 °C | 125 °C | - | - | 125 °C | - | 125 °C | - | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | - | - | -55 °C | - | -55 °C | - | -55 °C | -55 °C |
| Maximum reverse current | 0.01 µA | 0.01 µA | - | - | 0.01 µA | - | 0.01 µA | - | 0.02 µA | 0.02 µA |
| Reverse test voltage | 30 V | 30 V | - | - | 30 V | - | 30 V | - | 30 V | 30 V |
| Nominal diode capacitance | - | 17.5 pF | 42 pF | 60 pF | 39.3 pF | 18.75 pF | - | 11 pF | - | - |