MSiCSN05120CC, CA, and D
Silicon Carbide
Dual Schottky Power Rectifier 5A, 1200V
DESCRIPTION
These dual 1200 V rated SiC Schottky rectifiers are in a hermetically sealed package with
options for common cathode, common anode, and doubler configurations. They offer very
fast switching capabilities with greater efficiency at higher operating temperatures compared
to existing ultrafast silicon rectifiers.
Available
TO-257 Package
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
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•
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TO-257 package.
Lightweight.
Also available in:
Dual U3 package
(surface mount)
MSiCSS05120CC
Hermetically sealed package.
Internal metallurgical bonds.
High temperature (T
J
) +175
o
C.
Zero reverse recovery current.
Temperature independent switching behavior.
Very fast switching compared to fast or ultrafast rectifiers.
Positive V
F
temperature coefficient (parallel devices for higher currents).
RoHS compliant versions are available.
TO-257 package
(leaded)
MSiCSN05120
TO-257 tabless
package
(leaded)
MSiCSX05120
U4 package
APPLICATIONS / BENEFITS
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(surface mount)
MSiCSS05120
Schottky barrier diode for military, space and other high reliability applications.
Switching power supplies or other applications requiring extremely fast switching and
essentially no switching losses.
High forward surge capability.
High reverse voltage capability with very fast switching.
Inherently radiation hard >100 krads as described in Microsemi
MicroNote 050.
MAXIMUM RATINGS
@ T
C
= +25 C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction-to-Case
Working Peak Reverse Voltage
Non-Repetitive Peak Inverse Voltage
DC Blocking Voltage
o
Average DC Output Current @ 25 C
Non-Repetitive Sinusoidal Surge Current @ tp = 8.3 ms,
half sinewave, I
O
= 0; V
RM
= 0
Symbol
T
J
and T
STG
R
θ
JC
V
RWM
V
RSM
V
DC
I
O
I
FSM
Value
-65 to +175
1.6
1200
1200
1200
5
30
Unit
o
C
°C/W
V
V
V
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
o
T4-LDS-0103, Rev. 3 (130372)
©2013 Microsemi Corporation
Page 1 of 4
MSiCSN05120CC, CA, and D
MECHANICAL and PACKAGING
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CASE: Nickel plated copper base & 1020 steel frame.
TERMINALS: Solder dipped copper cored 52 alloy or RoHS compliant matte/tin plating.
MARKING: Alpha numeric.
POLARITY: See
schematic
on last page.
WEIGHT: Approximately 3.43 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
M SiC S
Microsemi
Silicon Carbide
Schottky
TO-257 Package
Avg Forward Current (A)
N
05
120 CC
(e3)
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Polarity
CC = Common Cathode
CA = Common Anode
D = Doubler
Voltage (x10)
Symbol
C
J
I
F
I
R
T
J
V
F
V
R
SYMBOLS & DEFINITIONS
Definition
Junction Capacitance: The junction capacitance in pF at a specified frequency (typically 1 MHz) and specified voltage.
Forward Current: The forward current dc value, no alternating component.
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Junction Temperature: The temperature of a semiconductor junction.
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
Reverse Voltage: The reverse voltage dc value, no alternating component.
T4-LDS-0103, Rev. 3 (130372)
©2013 Microsemi Corporation
Page 2 of 4
MSiCSN05120CC, CA, and D
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 C unless otherwise noted
Parameters / Test Conditions
Forward Voltage*
I
F
= 1 A, T
J
= 25 °C
I
F
= 2.5 A, T
J
= 25 °C
I
F
= 5.0 A, T
J
= 25 °C
Reverse Current
V
R
= 1200 V, T
J
= 25 °C
V
R
= 1200 V, T
J
= 175 °C
Junction Capacitance
V
R
= 0 V
f = 1 MHz
* Pulse test: Pulse width 300 µsec, duty cycle 2%.
Symbol
Min.
Max.
1.2
1.6
1.8
50
100
500
Typ.
Unit
o
V
F
V
I
R
µA
C
J
pF
T4-LDS-0103, Rev. 3 (130372)
©2013 Microsemi Corporation
Page 3 of 4
Embedded System
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