Freescale Semiconductor
Technical Data
Document Number: MMG20271H
Rev. 0, 12/2010
Enhancement Mode pHEMT
Technology (E-
-pHEMT)
High Linearity Amplifier
The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed
in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the
1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can
be utilized as a driver amplifier in the transmit chain and as a second stage LNA
in the receive chain
.
Features
•
Frequency: 1500--2700 MHz
•
Noise Figure: 1.7 dB @ 2140 MHz
•
P1dB: 27.5 dBm @ 2140 MHz
•
Small--Signal Gain: 16 dB @ 2140 MHz
•
Third Order Output Intercept Point: 42 dBm @ 2140 MHz
•
Single 5 Volt Supply
•
Supply Current: 180 mA
•
50 Ohm Operation (some external matching required)
•
Low Cost QFN Surface Mount Package
•
RoHS Compliant
•
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
MMG20271HT1
1500-
-2700 MHz, 16 dB
27.5 dBm
E-
-pHEMT
CASE 2131-
-01
QFN 3x3
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Noise Figure
Input Return Loss
(S11)
Output Return Loss
(S22)
Small--Signal Gain
(S21)
Power Output @
1dB Compression
Third Order Input
Intercept Point
Third Order Output
Intercept Point
Symbol
NF
IRL
ORL
G
p
P1db
IIP3
OIP3
1500
MHz
2.0
--16
--20
18
27
22
40
2140
MHz
1.7
--14
--22
16
27.5
26
42
2700
MHz
1.9
--17
--17
14
28
28
42
Unit
dB
dB
dB
dB
dBm
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
DD
I
DD
P
in
T
stg
T
J
Value
6
400
25
--65 to +150
150
Unit
V
mA
dBm
°C
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
DD
= 5 Vdc, T
A
= 25°C, 50 ohm system, application circuit tuned
for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 96°C, 5 Vdc, 190 mA, no RF applied
Symbol
R
θJC
Value
(3)
38
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MMG20271HT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(V
DD
= 5 Vdc, 2140 MHz, T
A
= 25°C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Third Order Input Intercept Point
Third Order Output Intercept Point
Reverse Isolation (S12)
Noise Figure
Supply Current
(1)
Supply Voltage
(1)
Symbol
G
p
IRL
ORL
P1dB
IIP3
OIP3
|S12|
NF
I
DD
V
DD
Min
13.9
—
—
—
—
—
—
—
148
—
Typ
16
--14
--22
27.5
26
42
--23
1.7
180
5
Max
—
—
—
—
—
—
—
—
227
—
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
mA
V
1. For reliable operation, the junction temperature should not exceed 150°C.
Table 5. Functional Pin Description
Name
RF
in
(1)
Pin Number
3
Description
RF input for the power amplifier. RF
in
has an RF choke
to ground internal to the package. No external blocking is
necessary unless externally applied DC is present on
the trace.
RF output for the power amplifier. This pin is DC coupled
and requires a DC blocking capacitor.
Bias voltage and current adjust pin.
The center metal base of the QFN package provides
both DC and RF ground as well as the heat sink contact
for the IC.
V
BA
N.C. N.C.
12
N.C.
N.C.
RF
in
1
2
3
4
5
6
N.C. N.C. N.C.
(Top View)
GND
11
10
9
8
7
RF
out
/V
DD
RF
out
/V
DD
N.C.
RF
out
/
V
DD
V
BA
GND
8, 9
12
Backside
Center Metal
1. The RF input has a DC path to ground and therefore may require an external
decoupling capacitor.
Figure 1. Pin Connections
Table 6. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
1
Package Peak Temperature
260
Unit
°C
MMG20271HT1
2
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 2140 MHz
R2
V
SUPPLY
R1
C7
12
11
10
C3
L2
Z3
L1
Z4
C6
C5
1
BIAS
CIRCUIT
9
RF
OUTPUT
C2
2
RF
INPUT
8
Z1
C1
Z2
3
7
4
Z1
Z2
5
6
Z3
Z4
0.041″ x 0.030″ Microstrip
0.198″ x 0.021″ Microstrip
0.139″ x 0.021″ Microstrip
0.026″ x 0.011″ Microstrip
Figure 2. MMG20271HT1 Test Circuit Schematic
Table 8. MMG20271HT1 Test Circuit Component Designations and Values
Part
C1
C2, C3, C7
C4
C5
C6
L1, R2
L2
R1
PCB
(1)
Description
1.8 pF Chip Capicitor
18 pF Chip Capacitors
Component Not Used
0.1
μF
Chip Capacitor
1.5 pF Chip Capacitor
0
Ω,
1 A Chip Resistor
23 nH Chip Inductor
220
Ω,
1/16 W Chip Resistor
0.010″,
ε
r
= 3.38, Multilayer
Part Number
GJM1555C1H1R8BB01D
GJM1555C1H180GB01D
GRM155R61A104K01D
GJM1555C1H1R5BB01D
ERJ2GE0R00X
0402CS--23NXGL
RC0402FR--07220RL
IS680--338
Manufacturer
Murata
Murata
Murata
Murata
Panasonic
Coilcraft
Yageo
Isola
1. Location L1 can be an inductor, resistor or jumper depending on frequency.
MMG20271HT1
RF Device Data
Freescale Semiconductor
3
50 OHM APPLICATION CIRCUIT: 2140 MHz
V
DD
5 V
V
BA
R2
R1
RF
IN
C7
C5
C4*
C3
L2
C1
L1
C2
C6
RF
OUT
QFN 3x3--12A
Rev. 0
*C4 component not used.
Figure 3. MMG20271HT1 Test Circuit Component Layout
Table 8. MMG20271HT1 Test Circuit Component Designations and Values
Part
C1
C2, C3, C7
C4
C5
C6
L1, R2
L2
R1
PCB
(1)
Description
1.8 pF Chip Capicitor
18 pF Chip Capacitors
Component Not Used
0.1
μF
Chip Capacitor
1.5 pF Chip Capacitor
0
Ω,
1 A Chip Resistor
23 nH Chip Inductor
220
Ω,
1/16 W Chip Resistor
0.010″,
ε
r
= 3.38, Multilayer
Part Number
GJM1555C1H1R8BB01D
GJM1555C1H180GB01D
GRM155R61A104K01D
GJM1555C1H1R5BB01D
ERJ2GE0R00X
0402CS--23NXGL
RC0402FR--07220RL
IS680--338
Manufacturer
Murata
Murata
Murata
Murata
Panasonic
Coilcraft
Yageo
Isola
1. Location L1 can be an inductor, resistor or jumper depending on frequency.
(Component Designations and Values table repeated for reference.)
MMG20271HT1
4
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS: 2140 MHz
18
G
p
, SMALL--SIGNAL GAIN (dB)
--13
17
IRL, INPUT RETURN LOSS (dB)
T
C
= --40°C
25°C
--14
T
C
= --40°C
--15
85°C
25°C
V
DD
= 5 Vdc
--17
2000
2075
2150
f, FREQUENCY (MHz)
2225
2300
16
85°C
15
V
DD
= 5 Vdc
14
2000
2075
2150
f, FREQUENCY (MHz)
2225
2300
--16
Figure 4. Small-
-Signal Gain (S21) versus
Frequency
--16
P1dB, 1 dB COMPRESSION POINT (dBm)
ORL, OUTPUT RETURN LOSS (dB)
29
Figure 5. Input Return Loss (S11) versus
Frequency
--18
T
C
= 85°C
--20
25°C
--22
--40°C
--24
2000
V
DD
= 5 Vdc
2075
2150
f, FREQUENCY (MHz)
2225
2300
28
T
C
= --40°C
25°C
27
85°C
26
V
DD
= 5 Vdc
25
2040
2090
2140
f, FREQUENCY (MHz)
2190
2240
Figure 6. Output Return Loss (S22) versus
Frequency
OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm)
45
T
C
= --40°C
25°C
41
85°C
39
V
DD
= 5 Vdc
37
2040
2090
2140
f, FREQUENCY (MHz)
2190
2240
0
2000
NF, NOISE FIGURE (dB)
2.4
Figure 7. P1dB versus Frequency
T
C
= 85°C
1.8
25°C
1.2
--40°C
43
0.6
V
DD
= 5 Vdc
2075
2150
f, FREQUENCY (MHz)
2225
2300
Figure 8. Third Order Output Intercept Point
versus Frequency
Figure 9. Noise Figure versus Frequency
MMG20271HT1
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
EEWORLD
