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GJM1555C1H1R8BB01D

Description
CAP CER 1.8PF 50V NP0 0402
CategoryPassive components   
File Size545KB,18 Pages
ManufacturerFREESCALE (NXP)
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CAP CER 1.8PF 50V NP0 0402

Freescale Semiconductor
Technical Data
Document Number: MMG20271H
Rev. 0, 12/2010
Enhancement Mode pHEMT
Technology (E-
-pHEMT)
High Linearity Amplifier
The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed
in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the
1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can
be utilized as a driver amplifier in the transmit chain and as a second stage LNA
in the receive chain
.
Features
Frequency: 1500--2700 MHz
Noise Figure: 1.7 dB @ 2140 MHz
P1dB: 27.5 dBm @ 2140 MHz
Small--Signal Gain: 16 dB @ 2140 MHz
Third Order Output Intercept Point: 42 dBm @ 2140 MHz
Single 5 Volt Supply
Supply Current: 180 mA
50 Ohm Operation (some external matching required)
Low Cost QFN Surface Mount Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
MMG20271HT1
1500-
-2700 MHz, 16 dB
27.5 dBm
E-
-pHEMT
CASE 2131-
-01
QFN 3x3
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Noise Figure
Input Return Loss
(S11)
Output Return Loss
(S22)
Small--Signal Gain
(S21)
Power Output @
1dB Compression
Third Order Input
Intercept Point
Third Order Output
Intercept Point
Symbol
NF
IRL
ORL
G
p
P1db
IIP3
OIP3
1500
MHz
2.0
--16
--20
18
27
22
40
2140
MHz
1.7
--14
--22
16
27.5
26
42
2700
MHz
1.9
--17
--17
14
28
28
42
Unit
dB
dB
dB
dB
dBm
dBm
dBm
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
DD
I
DD
P
in
T
stg
T
J
Value
6
400
25
--65 to +150
150
Unit
V
mA
dBm
°C
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
DD
= 5 Vdc, T
A
= 25°C, 50 ohm system, application circuit tuned
for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 96°C, 5 Vdc, 190 mA, no RF applied
Symbol
R
θJC
Value
(3)
38
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MMG20271HT1
1
RF Device Data
Freescale Semiconductor

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