FBR1000 - FBR1010
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
*
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Ideal for printed circuit board
FAST RECOVERY
BRIDGE RECTIFIERS
BR10
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
0.142 (3.60)
AC
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
0.75 (19.1)
Min.
0.30 (7.62)
0.25 (6.35)
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55
°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at I
F
= 5.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
Trr
R
θ
JC
T
J
T
STG
FBR FBR FBR FBR FBR FBR FBR
UNIT
1000 1001 1002 1004 1006 1008 1010
50
35
50
100
70
100
200
140
200
400
280
400
10
250
160
1.3
10
200
150
2.5
- 50 to + 150
- 50 to + 150
250
500
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
A
2
S
V
µA
µA
ns
°C/W
°C
°C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1 ) Measured with I
F
= 0.5 Amp., I
R
= 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( FBR1000 - FBR1010 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
Ω
10
Ω
+ 0.5
D.U.T.
50 Vdc
(approx)
1
Ω
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
0
- 0.25
Trr
+
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
10
250
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
8
200
Tc = 55
°C
6
150
4
100
2
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
50
0
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°
C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
PER DIODE
100
Pulse W idth = 300
µs
2% Duty Cycle
T
J
= 25
°C
10
NUMBER OF CYCLES AT 60Hz
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
T
J
= 100
°C
FORWARD CURRENT, AMPERES
1.0
1.0
0.1
T
J
= 25
°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
Microcontroller MCU
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