BAR65...
Silicon PIN Diode
•
Series diode for mobile communication in
low loss transmit-receiver switches
•
Band switch for TV-tuners
•
Very low forward resistance (typ. 0.65
Ω
@ 5 mA)
•
Low capacitance (typ. 0.5 pF @ 0V)
•
Fast switching applications
•
Pb-free (RoHS compliant) package
BAR65-02L
BAR65-02V
BAR65-03W
Type
BAR65-02L*
BAR65-02V
BAR65-03W
Package
TSLP-2-1
SC79
SOD323
Configuration
single, leadless
single
single
L
S
(nH)
0.4
0.6
1.8
Marking
NN
N
blue M
* Preliminary Data
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR65-02L,
T
S
≤
128°C
BAR65-02V,
T
S
≤
118°C
BAR65-03W,
T
S
≤
113°C
Junction temperature
Operating temperature range
Storage temperature
T
j
T
op
T
stg
Symbol
V
R
I
F
P
tot
250
250
250
150
-55 ... 125
-55 ... 150
°C
Value
30
100
Unit
V
mA
mW
1
2011-06-14
BAR65...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAR65-02L
BAR65-02V
BAR65-03W
Symbol
R
thJS
≤
90
≤
130
≤
145
Value
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Reverse current
typ.
-
0.93
max.
20
1
Unit
I
R
V
F
-
-
nA
V
V
R
= 20 V
Forward voltage
I
F
= 100 mA
1
For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2011-06-14
BAR65...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Diode capacitance
Symbol
min.
Values
typ.
max.
pF
-
-
-
0.45
0.4
0.5
700
10
5
1
0.65
0.56
80
0.9
0.8
-
k
Ω
-
-
-
-
-
-
Ω
Unit
C
T
V
R
= 1 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz ... 1.8 GHz
Reverse parallel resistance
R
P
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
r
f
-
-
-
τ
rr
I
F
= 1 mA,
f
= 100 MHz
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
-
0.95
0.9
-
ns
-
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
Insertion loss
1)
W
I
I
L
-
-
-
-
3.5
0.08
0.06
0.05
12
7
5
-
-
-
-
-
-
-
µm
dB
I
F
= 1 mA,
f
= 1.8 GHz
I
F
= 5 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
I
SO
-
-
-
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
1
BAR65-02L
in series configuration,
Z
= 50Ω
3
2011-06-14
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