MAT02FHZ datasheet, PDF - EEWORLD Datasheet

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MAT02FHZ: DescriptionTRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size649KB，12 Pages; ManufacturerADI; Websitehttps://www.analog.com; Environmental Compliance

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MAT02FHZ Overview

TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal

MAT02FHZ Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ADI
Parts packaging code	TO-78
package instruction	CYLINDRICAL, O-MBCY-W6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SUBSTRATE
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	400
JEDEC-95 code	TO-78
JESD-30 code	O-MBCY-W6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	NPN
Maximum power consumption environment	1.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.2 V

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FEATURES

Low Offset Voltage: 50 V max

Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max

High Gain (h

500 min at I

= 1 mA

300 min at I

= 1 A

Excellent Log Conformance: r

0.3

Low Offset Voltage Drift: 0.1 V/ C max

Improved Direct Replacement for LM194/394

Low Noise, Matched

Dual Monolithic Transistor

MAT02

PIN CONNECTION

TO-78

(H Suffix)

REV. E

Information furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assumed by Analog Devices for its

use, nor for any infringements of patents or other rights of third parties that

may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

www.analog.com

Fax: 781/326-8703

Input protection diodes are provided across the emitter-base

junctions to prevent degradation of the device characteristics

due to reverse-biased emitter current. The substrate is clamped

to the most negative emitter by the parasitic isolation junction

created by the protection diodes. This results in complete isola-

tion between the transistors.

The design of the MAT02 series of NPN dual monolithic tran-

sistors is optimized for very low noise, low drift and low r

Precision Monolithics’ exclusive Silicon Nitride “Triple-

Passivation” process stabilizes the critical device parameters

over wide ranges of temperature and elapsed time. Also, the high

current gain (h

) of the MAT02 is maintained over a wide

range of collector current. Exceptional characteristics of the

MAT02 include offset voltage of 50

µV

max (A/E grades) and

150

µV

max F grade. Device performance is specified over the

full military temperature range as well as at 25°C.

PRODUCT DESCRIPTION

The MAT02 should be used in any application where low

noise is a priority. The MAT02 can be used as an input

stage to make an amplifier with noise voltage of less than

1.0 nV/√Hz at 100 Hz. Other applications, such as log/antilog

circuits, may use the excellent logging conformity of the

MAT02. Typical bulk resistance is only 0.3

Ω

to 0.4

Ω.

The

MAT02 electrical characteristics approach those of an ideal

transistor when operated over a collector current range of 1

µA

to 10 mA. For applications requiring multiple devices

see MAT04 Quad Matched Transistor data sheet.

NOTE

Substrate is connected to case on TO-78 package.

Substrate is normally connected to the most negative

circuit potential, but can be floated.

MAT02FHZ Related Products

	MAT02FHZ	MAT02EHZ	MAT-02EH	MAT-02FH	MAT02BIEH
Description	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, BIP General Purpose Small Signal
Is it Rohs certified?	conform to	conform to	incompatible	incompatible	incompatible
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Shell connection	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	400	500	500	400	500
JEDEC-95 code	TO-78	TO-78	TO-78	TO-78	TO-78
JESD-30 code	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6
Number of components	2	2	2	2	2
Number of terminals	6	6	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
VCEsat-Max	0.2 V	0.1 V	0.1 V	0.2 V	0.1 V
Maker	ADI	-	-	ADI	ADI
Parts packaging code	TO-78	TO-78	TO-78	TO-78	-
package instruction	CYLINDRICAL, O-MBCY-W6	CYLINDRICAL, O-MBCY-W6	CYLINDRICAL, O-MBCY-W6	METAL CAN-6	-
Contacts	6	6	6	6	-
ECCN code	EAR99	EAR99	-	-	EAR99
JESD-609 code	e3	-	e0	e0	e0
Terminal surface	MATTE TIN	-	TIN LEAD	TIN LEAD	TIN LEAD

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