MAT-02FH datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> MAT-02FH

MAT-02FH: DescriptionTRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size649KB，12 Pages; ManufacturerADI; Websitehttps://www.analog.com

Download Datasheet Parametric Compare View All

MAT-02FH Overview

TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal

MAT-02FH Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ADI
Parts packaging code	TO-78
package instruction	METAL CAN-6
Contacts	6
Reach Compliance Code	compliant
Other features	LOW NOISE
Shell connection	SUBSTRATE
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	400
JEDEC-95 code	TO-78
JESD-30 code	O-MBCY-W6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	1.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.2 V

Preview

Download Datasheet

View All

FEATURES

Low Offset Voltage: 50 V max

Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max

High Gain (h

500 min at I

= 1 mA

300 min at I

= 1 A

Excellent Log Conformance: r

0.3

Low Offset Voltage Drift: 0.1 V/ C max

Improved Direct Replacement for LM194/394

Low Noise, Matched

Dual Monolithic Transistor

MAT02

PIN CONNECTION

TO-78

(H Suffix)

REV. E

Information furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assumed by Analog Devices for its

use, nor for any infringements of patents or other rights of third parties that

may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700

www.analog.com

Fax: 781/326-8703

Input protection diodes are provided across the emitter-base

junctions to prevent degradation of the device characteristics

due to reverse-biased emitter current. The substrate is clamped

to the most negative emitter by the parasitic isolation junction

created by the protection diodes. This results in complete isola-

tion between the transistors.

The design of the MAT02 series of NPN dual monolithic tran-

sistors is optimized for very low noise, low drift and low r

Precision Monolithics’ exclusive Silicon Nitride “Triple-

Passivation” process stabilizes the critical device parameters

over wide ranges of temperature and elapsed time. Also, the high

current gain (h

) of the MAT02 is maintained over a wide

range of collector current. Exceptional characteristics of the

MAT02 include offset voltage of 50

µV

max (A/E grades) and

150

µV

max F grade. Device performance is specified over the

full military temperature range as well as at 25°C.

PRODUCT DESCRIPTION

The MAT02 should be used in any application where low

noise is a priority. The MAT02 can be used as an input

stage to make an amplifier with noise voltage of less than

1.0 nV/√Hz at 100 Hz. Other applications, such as log/antilog

circuits, may use the excellent logging conformity of the

MAT02. Typical bulk resistance is only 0.3

Ω

to 0.4

Ω.

The

MAT02 electrical characteristics approach those of an ideal

transistor when operated over a collector current range of 1

µA

to 10 mA. For applications requiring multiple devices

see MAT04 Quad Matched Transistor data sheet.

NOTE

Substrate is connected to case on TO-78 package.

Substrate is normally connected to the most negative

circuit potential, but can be floated.

MAT-02FH Related Products

	MAT-02FH	MAT02EHZ	MAT-02EH	MAT02FHZ	MAT02BIEH
Description	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, METAL CAN-6, BIP General Purpose Small Signal	TRANSISTOR 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78, BIP General Purpose Small Signal
Is it Rohs certified?	incompatible	conform to	incompatible	conform to	incompatible
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Shell connection	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	400	500	500	400	500
JEDEC-95 code	TO-78	TO-78	TO-78	TO-78	TO-78
JESD-30 code	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6	O-MBCY-W6
Number of components	2	2	2	2	2
Number of terminals	6	6	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	225	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	1.8 W	1.8 W	1.8 W	1.8 W	1.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
VCEsat-Max	0.2 V	0.1 V	0.1 V	0.2 V	0.1 V
Maker	ADI	-	-	ADI	ADI
Parts packaging code	TO-78	TO-78	TO-78	TO-78	-
package instruction	METAL CAN-6	CYLINDRICAL, O-MBCY-W6	CYLINDRICAL, O-MBCY-W6	CYLINDRICAL, O-MBCY-W6	-
Contacts	6	6	6	6	-
JESD-609 code	e0	-	e0	e3	e0
Terminal surface	TIN LEAD	-	TIN LEAD	MATTE TIN	TIN LEAD
ECCN code	-	EAR99	-	EAR99	EAR99

Recommended Resources

Illustration of the design principles and applications of mobile phone radio frequency circuits

Zero-crossing trigger circuit diagram based on thyristor

ICL7660 application example circuit voltage doubler converter circuit diagram

Low power consumption multivibrator circuit diagram

Simple leakage alarm circuit

Homemade economical high-voltage power supply for measurement

Summarize the past year in one sentence: [i=s] This post was last edited by mzb2012 on 2016-1-22 15:47 [/i] [size=5] Time is really flying fast. In a blink of an eye, there are only a few days left in the lunar calendar of 2015 [/size][size=...; mzb2012 Talking

stm32 control IO expansion IC 74hc4094d: The 74hc595 cascade program test is fine, but now the problem is that PC3, PC4, PC5 are connected to 74hc4094D output Q1-Q8 is connected to LED1-LED8 lights, PB0 is connected in series with 8 keys KEY...; mesthxjy stm32/stm8

EWSTM8 Getting Started Guide, which has just been used for less than a month: If you have money, you want to see the guinea pig of EWSTM8. I am one, but an old one.The previous PP,and the next is the introduction of the guinea pig. IAR EWSTM8 project creation.pdf (636.96 KB)Dow...; huangnian stm32/stm8

[TI's first low power design competition] + Solar electronic clock: [i=s]This post was last edited by a student of media on 2014-12-4 19:00[/i] I saw a netizen post about the application of small solar cells in the forum, which coincided with my idea. So I made a smal...; 传媒学子 Microcontroller MCU

How to measure and solve voltage sag problems?: [size=4] Voltage sag or drop refers to the phenomenon that the effective value of the power supply voltage suddenly drops in a short period of time and then rises back to normal. The Institute of Elec...; Jacktang Analogue and Mixed Signal

PSpice simulation integral circuit output problem: [i=s] This post was last edited by Ruizai Fendou on 2021-4-21 15:16[/i]When simulating a memristor circuit, the output voltage waveform of U2 needs to be measured, but the output waveform remains unch...; 睿仔奋斗 Analog electronics

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components